2N4922G PDF Specs and Replacement
Type Designator: 2N4922G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO-225
2N4922G Substitution
2N4922G PDF detailed specifications
2n4922g.pdf
2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http //onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction - PD = 30 ... See More ⇒
2n4921g 2n4922g 2n4923g.pdf
2N4921G, 2N4922G, 2N4923G Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. www.onsemi.com Features 1.0 AMPERE Low Saturation Voltage GENERAL PURPOSE Excellent Power Dissipation POWER TRANSISTORS Excellent Safe Operating Area 40-80 VOLTS, 30 WATTS Complement ... See More ⇒
2n4921 2n4922 2n4923.pdf
Order this document MOTOROLA by 2N4921/D SEMICONDUCTOR TECHNICAL DATA 2N4921 Medium-Power Plastic NPN thru Silicon Transistors 2N4923 * . . . designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature *Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp 1 AMPERE Excellent ... See More ⇒
2n4921 2n4922 2n4923.pdf
2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http //onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction - PD = 30 ... See More ⇒
Detailed specifications: 2N4910XSMD , 2N4910XSMD05 , 2N4911XSMD , 2N4911XSMD05 , 2N4918G , 2N4919G , 2N4920G , 2N4921G , A1013 , 2N4923G , 2N4928CSM , 2N4928DCSM , 2N4939DCSM , 2N5001SMD , 2N5010S , 2N5011S , 2N5012S .
History: 2N4920G
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