2N5089G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2N5088, 2N5089Amplifier TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*3 COLLECTOR2MAXIMUM RATINGSBASERating Symbol Value UnitCollector - Emitter Voltage VCEO Vdc1 EMITTER2N5088 302N5089 25Collector - Base Voltage VCBO Vdc2N5088 35TO-922N5089 30CASE 29Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1Collector Current - Conti

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5088/DAmplifier TransistorsNPN Silicon2N50882N5089COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol 2N508 2N508 UnitTO92 (TO226AA)8 9CollectorEmitter Voltage VCEO 30 25 VdcCollectorBase Voltage VCBO 35 30 VdcEmitterBase Voltage VEBO 3.0 VdcCollec

2N5088 MMBT50882N5089 MMBT5089CEC TO-92BBSOT-23EMark: 1Q / 1RNPN General Purpose AmplifierThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1A to 50 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 2N5088 30 V2N5089 25 VVCBO

2N5088/5089 NPN EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 2N5088: 30V2N5089: 25V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage :2N5088 VCBO2N5089 30 VCollector-Emitter Voltage :2N5088 VCEO 30 V2N5089 25 V Emitter-Base Voltage VEBO 4.5 V

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

2N5088, 2N5089Amplifier TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*3 COLLECTOR2MAXIMUM RATINGSBASERating Symbol Value UnitCollector - Emitter Voltage VCEO Vdc1 EMITTER2N5088 302N5089 25Collector - Base Voltage VCBO Vdc2N5088 35TO-922N5089 30CASE 29Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1Collector Current - Conti