2N5089G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5089G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hFE): 400
Encapsulados: TO-92
Búsqueda de reemplazo de 2N5089G
- Selecciónⓘ de transistores por parámetros
2N5089G datasheet
2n5089g.pdf
2N5088, 2N5089 Amplifier Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* 3 COLLECTOR 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 1 EMITTER 2N5088 30 2N5089 25 Collector - Base Voltage VCBO Vdc 2N5088 35 TO-92 2N5089 30 CASE 29 Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1 Collector Current - Conti
2n5088 2n5089.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5088/D Amplifier Transistors NPN Silicon 2N5088 2N5089 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol 2N508 2N508 Unit TO 92 (TO 226AA) 8 9 Collector Emitter Voltage VCEO 30 25 Vdc Collector Base Voltage VCBO 35 30 Vdc Emitter Base Voltage VEBO 3.0 Vdc Collec
2n5088 mmbt5088 2n5089 mmbt5089.pdf
2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B SOT-23 E Mark 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 2N5088 30 V 2N5089 25 V VCBO
2n5088-2n5089.pdf
2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 Collector-Emitter Voltage VCEO= 2N5088 30V 2N5089 25V Collector Dissipation PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage 2N5088 VCBO 2N5089 30 V Collector-Emitter Voltage 2N5088 VCEO 30 V 2N5089 25 V Emitter-Base Voltage VEBO 4.5 V
Otros transistores... 2N5014S, 2N5015SX, 2N5015X, 2N5038G, 2N5052SMD, 2N5087G, 2N5087RLRAG, 2N5088G, BC639, 2N5151-220M, 2N5151SMD05, 2N5151U3, 2N5151XSMD05, 2N5152A, 2N5152SMD, 2N5152SMD05, 2N5152U3
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
mj21194 | oc71 transistor | 2n3440 | bc550c | 2n3904 transistor datasheet | p75nf75 | d880 transistor | 2sc1845







