All Transistors. 2N5089G Datasheet

 

2N5089G Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N5089G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: TO-92

 2N5089G Transistor Equivalent Substitute - Cross-Reference Search

   

2N5089G Datasheet (PDF)

 ..1. Size:83K  onsemi
2n5089g.pdf

2N5089G
2N5089G

2N5088, 2N5089Amplifier TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*3 COLLECTOR2MAXIMUM RATINGSBASERating Symbol Value UnitCollector - Emitter Voltage VCEO Vdc1 EMITTER2N5088 302N5089 25Collector - Base Voltage VCBO Vdc2N5088 35TO-922N5089 30CASE 29Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1Collector Current - Conti

 8.1. Size:281K  motorola
2n5088 2n5089.pdf

2N5089G
2N5089G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5088/DAmplifier TransistorsNPN Silicon2N50882N5089COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol 2N508 2N508 UnitTO92 (TO226AA)8 9CollectorEmitter Voltage VCEO 30 25 VdcCollectorBase Voltage VCBO 35 30 VdcEmitterBase Voltage VEBO 3.0 VdcCollec

 8.2. Size:97K  fairchild semi
2n5088 mmbt5088 2n5089 mmbt5089.pdf

2N5089G
2N5089G

2N5088 MMBT50882N5089 MMBT5089CEC TO-92BBSOT-23EMark: 1Q / 1RNPN General Purpose AmplifierThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1A to 50 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 2N5088 30 V2N5089 25 VVCBO

 8.3. Size:58K  samsung
2n5088-2n5089.pdf

2N5089G
2N5089G

2N5088/5089 NPN EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 2N5088: 30V2N5089: 25V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage :2N5088 VCBO2N5089 30 VCollector-Emitter Voltage :2N5088 VCEO 30 V2N5089 25 V Emitter-Base Voltage VEBO 4.5 V

 8.4. Size:66K  central
2n5088 2n5089.pdf

2N5089G

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 8.5. Size:83K  onsemi
2n5088 2n5089.pdf

2N5089G
2N5089G

2N5088, 2N5089Amplifier TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*3 COLLECTOR2MAXIMUM RATINGSBASERating Symbol Value UnitCollector - Emitter Voltage VCEO Vdc1 EMITTER2N5088 302N5089 25Collector - Base Voltage VCBO Vdc2N5088 35TO-922N5089 30CASE 29Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1Collector Current - Conti

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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