2N5089G Specs and Replacement

Type Designator: 2N5089G

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 400

Noise Figure, dB: -

Package: TO-92

 2N5089G Substitution

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2N5089G datasheet

 ..1. Size:83K  onsemi

2n5089g.pdf pdf_icon

2N5089G

2N5088, 2N5089 Amplifier Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* 3 COLLECTOR 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 1 EMITTER 2N5088 30 2N5089 25 Collector - Base Voltage VCBO Vdc 2N5088 35 TO-92 2N5089 30 CASE 29 Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1 Collector Current - Conti... See More ⇒

 8.1. Size:281K  motorola

2n5088 2n5089.pdf pdf_icon

2N5089G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5088/D Amplifier Transistors NPN Silicon 2N5088 2N5089 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol 2N508 2N508 Unit TO 92 (TO 226AA) 8 9 Collector Emitter Voltage VCEO 30 25 Vdc Collector Base Voltage VCBO 35 30 Vdc Emitter Base Voltage VEBO 3.0 Vdc Collec... See More ⇒

 8.2. Size:97K  fairchild semi

2n5088 mmbt5088 2n5089 mmbt5089.pdf pdf_icon

2N5089G

2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B SOT-23 E Mark 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 2N5088 30 V 2N5089 25 V VCBO... See More ⇒

 8.3. Size:58K  samsung

2n5088-2n5089.pdf pdf_icon

2N5089G

2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 Collector-Emitter Voltage VCEO= 2N5088 30V 2N5089 25V Collector Dissipation PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage 2N5088 VCBO 2N5089 30 V Collector-Emitter Voltage 2N5088 VCEO 30 V 2N5089 25 V Emitter-Base Voltage VEBO 4.5 V ... See More ⇒

Detailed specifications: 2N5014S, 2N5015SX, 2N5015X, 2N5038G, 2N5052SMD, 2N5087G, 2N5087RLRAG, 2N5088G, BC639, 2N5151-220M, 2N5151SMD05, 2N5151U3, 2N5151XSMD05, 2N5152A, 2N5152SMD, 2N5152SMD05, 2N5152U3

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