2N5302G Datasheet. Equivalente

 ..1. Size:92K  onsemi
 2n5302g.pdf

2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http //onsemi.com Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc 30 AMPERES Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS (Note 1) (TJ = 25 C unless otherwis

 8.1. Size:251K  motorola
 2n5301 2n5302 2n5303.pdf

Order this document MOTOROLA by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 High-Power NPN Silicon 2N5303 Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE High Collector Emitter Sustaining Voltage POWER TRANSISTORS VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) NPN SILICON Low Collector Emitter Saturatio

 8.2. Size:92K  onsemi
 2n5302.pdf

2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http //onsemi.com Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc 30 AMPERES Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS (Note 1) (TJ = 25 C unless otherwis

 8.3. Size:167K  cn sptech
 2n5302.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N5302 DESCRIPTION Low Collector Saturation Voltage- V = 0.75V(Max.)@ I = 10A CE(sat) C Wide Area of Safe Operation Complement to Type 2N4399 APPLICATIONS Designed for use in power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba

 8.4. Size:196K  inchange semiconductor
 2n5302.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N5302 DESCRIPTION Low Collector Saturation Voltage- V = 0.75V(Max.)@ I = 10A CE(sat) C Wide Area of Safe Operation Complement to Type 2N4399 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in power amplifier and switching cir

 8.5. Size:119K  inchange semiconductor
 2n5301 2n5302 2n5303.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5301 2N5302 2N5303 DESCRIPTION With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified o