2N5302G Todos los transistores

 

2N5302G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N5302G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 30 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 2 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO-204AA
 

 Búsqueda de reemplazo de 2N5302G

   - Selección ⓘ de transistores por parámetros

 

2N5302G Datasheet (PDF)

 ..1. Size:92K  onsemi
2n5302g.pdf pdf_icon

2N5302G

2N5302High-Power NPN SiliconTransistorHigh-power NPN silicon transistors are for use in power amplifierand switching circuits applications.Featureshttp://onsemi.com Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc30 AMPERES Pb-Free Package is Available*POWER TRANSISTORNPN SILICONMAXIMUM RATINGS (Note 1) (TJ = 25C unless otherwis

 8.1. Size:251K  motorola
2n5301 2n5302 2n5303.pdf pdf_icon

2N5302G

Order this documentMOTOROLAby 2N5301/DSEMICONDUCTOR TECHNICAL DATA2N53012N5302High-Power NPN Silicon2N5303Transistors. . . for use in power amplifier and switching circuits applications.20 AND 30 AMPERE High CollectorEmitter Sustaining Voltage POWER TRANSISTORSVCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303)NPN SILICON Low CollectorEmitter Saturatio

 8.2. Size:92K  onsemi
2n5302.pdf pdf_icon

2N5302G

2N5302High-Power NPN SiliconTransistorHigh-power NPN silicon transistors are for use in power amplifierand switching circuits applications.Featureshttp://onsemi.com Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc30 AMPERES Pb-Free Package is Available*POWER TRANSISTORNPN SILICONMAXIMUM RATINGS (Note 1) (TJ = 25C unless otherwis

 8.3. Size:167K  cn sptech
2n5302.pdf pdf_icon

2N5302G

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N5302DESCRIPTIONLow Collector Saturation Voltage-: V = 0.75V(Max.)@ I = 10ACE(sat) CWide Area of Safe OperationComplement to Type 2N4399APPLICATIONSDesigned for use in power amplifier and switching circuitsapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

Otros transistores... 2N5157T3 , 2N5190G , 2N5191G , 2N5192G , 2N5194G , 2N5195G , 2N5237S , 2N5238S , A1015 , 2N5320X , 2N5338LCC4 , 2N5339LCC4 , 2N5339U3 , 2N5401CSM , 2N5401DCSM , 2N5401G , 2N5401HR .

 

 
Back to Top

 


 
.