All Transistors. 2N5302G Datasheet

 

2N5302G Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5302G

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO-204AA

2N5302G Transistor Equivalent Substitute - Cross-Reference Search

 

2N5302G Datasheet (PDF)

0.1. 2n5302g.pdf Size:92K _onsemi

2N5302G
2N5302G

2N5302High-Power NPN SiliconTransistorHigh-power NPN silicon transistors are for use in power amplifierand switching circuits applications.Featureshttp://onsemi.com Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc30 AMPERES Pb-Free Package is Available*POWER TRANSISTORNPN SILICONMAXIMUM RATINGS (Note 1) (TJ = 25C unless otherwis

8.1. 2n5301 2n5302 2n5303.pdf Size:251K _motorola

2N5302G
2N5302G

Order this documentMOTOROLAby 2N5301/DSEMICONDUCTOR TECHNICAL DATA2N53012N5302High-Power NPN Silicon2N5303Transistors. . . for use in power amplifier and switching circuits applicat

8.2. 2n5302.pdf Size:92K _onsemi

2N5302G
2N5302G

2N5302High-Power NPN SiliconTransistorHigh-power NPN silicon transistors are for use in power amplifierand switching circuits applications.Featureshttp://onsemi.com Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc30 AMPERES Pb-Free Package is Available*POWER TRANSISTORNPN SILICONMAXIMUM RATINGS (Note 1) (TJ = 25C unless otherwis

 8.3. 2n5301 2n5302 2n5303.pdf Size:119K _inchange_semiconductor

2N5302G
2N5302G

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5301 2N5302 2N5303 DESCRIPTION With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified o

8.4. 2n5302.pdf Size:196K _inchange_semiconductor

2N5302G
2N5302G

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2N5302DESCRIPTIONLow Collector Saturation Voltage-: V = 0.75V(Max.)@ I = 10ACE(sat) CWide Area of Safe OperationComplement to Type 2N4399100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in power amplifier and switching cir

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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