2N5302G Datasheet. Specs and Replacement

Type Designator: 2N5302G  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO-204AA

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2N5302G datasheet

 ..1. Size:92K  onsemi

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2N5302G

2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http //onsemi.com Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc 30 AMPERES Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS (Note 1) (TJ = 25 C unless otherwis... See More ⇒

 8.1. Size:251K  motorola

2n5301 2n5302 2n5303.pdf pdf_icon

2N5302G

Order this document MOTOROLA by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 High-Power NPN Silicon 2N5303 Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE High Collector Emitter Sustaining Voltage POWER TRANSISTORS VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) NPN SILICON Low Collector Emitter Saturatio... See More ⇒

 8.2. Size:92K  onsemi

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2N5302G

2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http //onsemi.com Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc 30 AMPERES Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS (Note 1) (TJ = 25 C unless otherwis... See More ⇒

 8.3. Size:167K  cn sptech

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2N5302G

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N5302 DESCRIPTION Low Collector Saturation Voltage- V = 0.75V(Max.)@ I = 10A CE(sat) C Wide Area of Safe Operation Complement to Type 2N4399 APPLICATIONS Designed for use in power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba... See More ⇒

Detailed specifications: 2N5157T3, 2N5190G, 2N5191G, 2N5192G, 2N5194G, 2N5195G, 2N5237S, 2N5238S, TIP41, 2N5320X, 2N5338LCC4, 2N5339LCC4, 2N5339U3, 2N5401CSM, 2N5401DCSM, 2N5401G, 2N5401HR

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