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2N5302G Specs and Replacement


   Type Designator: 2N5302G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO-204AA

 2N5302G Transistor Equivalent Substitute - Cross-Reference Search

   

2N5302G detailed specifications

 ..1. Size:92K  onsemi
2n5302g.pdf pdf_icon

2N5302G

2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http //onsemi.com Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc 30 AMPERES Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS (Note 1) (TJ = 25 C unless otherwis... See More ⇒

 8.1. Size:251K  motorola
2n5301 2n5302 2n5303.pdf pdf_icon

2N5302G

Order this document MOTOROLA by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 High-Power NPN Silicon 2N5303 Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE High Collector Emitter Sustaining Voltage POWER TRANSISTORS VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) NPN SILICON Low Collector Emitter Saturatio... See More ⇒

 8.2. Size:92K  onsemi
2n5302.pdf pdf_icon

2N5302G

2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http //onsemi.com Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc 30 AMPERES Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS (Note 1) (TJ = 25 C unless otherwis... See More ⇒

 8.3. Size:167K  cn sptech
2n5302.pdf pdf_icon

2N5302G

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N5302 DESCRIPTION Low Collector Saturation Voltage- V = 0.75V(Max.)@ I = 10A CE(sat) C Wide Area of Safe Operation Complement to Type 2N4399 APPLICATIONS Designed for use in power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba... See More ⇒

Detailed specifications: 2N5157T3 , 2N5190G , 2N5191G , 2N5192G , 2N5194G , 2N5195G , 2N5237S , 2N5238S , TIP41 , 2N5320X , 2N5338LCC4 , 2N5339LCC4 , 2N5339U3 , 2N5401CSM , 2N5401DCSM , 2N5401G , 2N5401HR .

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