2N5665SMD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5665SMD  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-emisor (Vce): 300 V

Corriente del colector DC máxima (Ic): 3 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO-276AB

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2N5665SMD datasheet

 ..1. Size:10K  semelab
 2n5665smd.pdf pdf_icon

2N5665SMD

2N5665SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 300V IC = 3A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

 8.1. Size:341K  semelab
 2n5665n1.pdf pdf_icon

2N5665SMD

NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 Hermetic SMD0.5 Ceramic Surface Mount. Ideally Suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 400V VCEO Collector Emitter Voltage 300V VEBO Emitter Base Voltage 6V IC Cont

 8.2. Size:127K  inchange semiconductor
 2n5664 2n5665.pdf pdf_icon

2N5665SMD

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5664 2N5665 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Em

 8.3. Size:221K  inchange semiconductor
 2n5665.pdf pdf_icon

2N5665SMD

isc Silicon NPN Power Transistor 2N5665 DESCRIPTION Collector-Emitter Breakdown Voltage- V =300V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 30

MOSTRAR MÁS

Otros transistores... 2N5551SC, 2N5655G, 2N5657G, 2N5660U3, 2N5661U3, 2N5664SMD, 2N5664SMD05, 2N5665N1, 8050, 2N5666S, 2N5666SMD, 2N5666SMD05, 2N5666U3, 2N5667N1, 2N5667S, 2N5681SMD05, 2N5682X