Справочник транзисторов. 2N5665SMD

 

Биполярный транзистор 2N5665SMD - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N5665SMD
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 30 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Граничная частота коэффициента передачи тока (ft): 20 MHz
   Статический коэффициент передачи тока (hfe): 25
   Корпус транзистора: TO-276AB

 Аналоги (замена) для 2N5665SMD

 

 

2N5665SMD Datasheet (PDF)

 ..1. Size:10K  semelab
2n5665smd.pdf

2N5665SMD

2N5665SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 300V IC = 3A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (

 8.1. Size:341K  semelab
2n5665n1.pdf

2N5665SMD
2N5665SMD

NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 Hermetic SMD0.5 Ceramic Surface Mount. Ideally Suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 400V VCEO Collector Emitter Voltage 300V VEBO Emitter Base Voltage 6V IC Cont

 8.2. Size:127K  inchange semiconductor
2n5664 2n5665.pdf

2N5665SMD
2N5665SMD

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5664 2N5665 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Em

 8.3. Size:221K  inchange semiconductor
2n5665.pdf

2N5665SMD
2N5665SMD

isc Silicon NPN Power Transistor 2N5665DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =300V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 30

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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