2N5665SMD - описание и поиск аналогов

2N5665SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 300V IC = 3A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 Hermetic SMD0.5 Ceramic Surface Mount. Ideally Suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 400V VCEO Collector Emitter Voltage 300V VEBO Emitter Base Voltage 6V IC Cont

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5664 2N5665 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Em

isc Silicon NPN Power Transistor 2N5665 DESCRIPTION Collector-Emitter Breakdown Voltage- V =300V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 30