2N6035G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6035G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 25 MHz
Capacitancia de salida (Cc): 200 pF
Ganancia de corriente contínua (hFE): 750
Encapsulados: TO225
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2N6035G datasheet
2n6035g 2n6035g 2n6036g.pdf
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors 4.0 AMPERES DARLINGTON Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS ESD Ra
2n6035 2n6036 2n6038 2n6039.pdf
Order this document MOTOROLA by 2N6035/D SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 (See 2N5630) Plastic Darlington Complementary Silicon Power PNP Transistors 2N6035 . . . designed for general purpose amplifier and low speed switching applications. High DC Current Gain 2N6036* hFE = 2000 (Typ) @ IC = 2.0 Adc NPN Collector Emitter Sustaining Voltage @
2n6034 2n6035 2n6036.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6034 2N6035 2N6036 DESCRIPTION With TO-126 package Complement to type 2N6037/6038/6039 DARLINGTON High DC current gain APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute ma
Otros transistores... 2N5794U , 2N5794UC , 2N5796U , 2N5883G , 2N5884G , 2N5885G , 2N5886G , 2N6034G , BC639 , 2N6036G , 2N6038G , 2N6039G , 2N6040G , 2N6042G , 2N6043G , 2N6045G , 2N6052G .
History: KT209B | IDI8002
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