2N6035G Datasheet. Specs and Replacement

Type Designator: 2N6035G  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 25 MHz

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO225

 2N6035G Substitution

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2N6035G datasheet

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2N6035G

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors 4.0 AMPERES DARLINGTON Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS ESD Ra... See More ⇒

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Order this document MOTOROLA by 2N6035/D SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 (See 2N5630) Plastic Darlington Complementary Silicon Power PNP Transistors 2N6035 . . . designed for general purpose amplifier and low speed switching applications. High DC Current Gain 2N6036* hFE = 2000 (Typ) @ IC = 2.0 Adc NPN Collector Emitter Sustaining Voltage @ ... See More ⇒

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6034 2N6035 2N6036 DESCRIPTION With TO-126 package Complement to type 2N6037/6038/6039 DARLINGTON High DC current gain APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute ma... See More ⇒

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Detailed specifications: 2N5794U, 2N5794UC, 2N5796U, 2N5883G, 2N5884G, 2N5885G, 2N5886G, 2N6034G, BC639, 2N6036G, 2N6038G, 2N6039G, 2N6040G, 2N6042G, 2N6043G, 2N6045G, 2N6052G

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