2N6052G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6052G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Capacitancia de salida (Cc): 500 pF
Ganancia de corriente contínua (hfe): 750
Paquete / Cubierta: TO204AA
Búsqueda de reemplazo de transistor bipolar 2N6052G
2N6052G Datasheet (PDF)
2n6052g.pdf
2N6052Preferred Device Darlington ComplementarySilicon Power TransistorsThis package is designed for general-purpose amplifier and lowfrequency switching applications.Featureshttp://onsemi.com High DC Current Gain hFE = 3500 (Typ) @ IC = 5.0 Adc12 AMPERE Collector-Emitter Sustaining Voltage @ 100 mA VCEO(sus) = 100 Vdc (Min) COMPLEMENTARY SILICON Monolit
2n6050 2n6051 2n6052 2n6057 2n6058 2n6059.pdf
Order this documentMOTOROLAby 2N6050/DSEMICONDUCTOR TECHNICAL DATAPNP2N6050Darlington ComplementarythruSilicon Power Transistors. . . designed for generalpurpose amplifier and low frequency switching applications.2N6052* High DC Current Gain NPNhFE = 3500 (Typ) @ IC = 5.0 Adc CollectorEmitter Sustaining Voltage @ 100 mA 2N6057VCEO(sus) = 60 Vdc (
2n6050-2n6051-2n6052-2n6057-2n6058-2n6059.pdf
POWER COMPLEMENTARY POWER COMPLEMENTARY SILICON TRANSISTORSSILICON TRANSISTORSThe 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively.
2n6050 2n6051 2n6052 2n6057 2n6058 2n6059.pdf
ABoca Semiconductor Corp. BSCABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com
2n6052.pdf
INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2N6052DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I = -6AFE CCollector-Emitter Sustaining Voltage-V = -100V(Min)CEO(SUS)Complement to type 2N6059Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
