All Transistors. 2N6052G Datasheet

 

2N6052G Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N6052G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO204AA

 2N6052G Transistor Equivalent Substitute - Cross-Reference Search

   

2N6052G Datasheet (PDF)

 ..1. Size:132K  onsemi
2n6052g.pdf

2N6052G
2N6052G

2N6052Preferred Device Darlington ComplementarySilicon Power TransistorsThis package is designed for general-purpose amplifier and lowfrequency switching applications.Featureshttp://onsemi.com High DC Current Gain hFE = 3500 (Typ) @ IC = 5.0 Adc12 AMPERE Collector-Emitter Sustaining Voltage @ 100 mA VCEO(sus) = 100 Vdc (Min) COMPLEMENTARY SILICON Monolit

 8.1. Size:275K  motorola
2n6050 2n6051 2n6052 2n6057 2n6058 2n6059.pdf

2N6052G
2N6052G

Order this documentMOTOROLAby 2N6050/DSEMICONDUCTOR TECHNICAL DATAPNP2N6050Darlington ComplementarythruSilicon Power Transistors. . . designed for generalpurpose amplifier and low frequency switching applications.2N6052* High DC Current Gain NPNhFE = 3500 (Typ) @ IC = 5.0 Adc CollectorEmitter Sustaining Voltage @ 100 mA 2N6057VCEO(sus) = 60 Vdc (

 8.2. Size:217K  comset
2n6050-2n6051-2n6052-2n6057-2n6058-2n6059.pdf

2N6052G
2N6052G

POWER COMPLEMENTARY POWER COMPLEMENTARY SILICON TRANSISTORSSILICON TRANSISTORSThe 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively.

 8.3. Size:195K  bocasemi
2n6050 2n6051 2n6052 2n6057 2n6058 2n6059.pdf

2N6052G
2N6052G

ABoca Semiconductor Corp. BSCABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com

 8.4. Size:184K  inchange semiconductor
2n6052.pdf

2N6052G
2N6052G

INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2N6052DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I = -6AFE CCollector-Emitter Sustaining Voltage-V = -100V(Min)CEO(SUS)Complement to type 2N6059Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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