B722 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

B772(PNP) TO-126 TransistorTO-1261. EMITTER 2.COLLECTOR 3.BASE 3 21 Features Low speed switching 2.5007.4002.9001.1007.800 Dimensions in inches and (millimeters)1.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.9003.0004.100Symbol Parameter Value Units3.20010.6000.000VCBO Collector-Base Voltage -40 V 11.0000.300VCEO Collector-E

B772(PNP) TO-126 TransistorTO-1261. EMITTER 2.COLLECTOR 3.BASE 3 21 Features Low speed switching 2.5007.4002.9001.1007.800 Dimensions in inches and (millimeters)1.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.9003.0004.100Symbol Parameter Value Units3.20010.6000.000VCBO Collector-Base Voltage -40 V 11.0000.300VCEO Collector-E

PNP Transistor KSB772 datasheetwww.semicon-data.dePNP Transistor KSB772 datasheetwww.semicon-data.dePNP Transistor KSB772 datasheetwww.semicon-data.de

B722SPNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audiofrequency power amplifier and low speed switchingSOT-23 applications1BASE 2EMITTER 3COLLECTOR OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Colle

isc Silicon PNP Power Transistors 2SB722DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB