B722
Datasheet, Equivalent, Cross Reference Search
Type Designator: B722
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.25
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 80
MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
TO126
B722
Datasheet (PDF)
..1. Size:206K lge
b722 to-126.pdf
B772(PNP) TO-126 TransistorTO-1261. EMITTER 2.COLLECTOR 3.BASE 3 21 Features Low speed switching 2.5007.4002.9001.1007.800 Dimensions in inches and (millimeters)1.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.9003.0004.100Symbol Parameter Value Units3.20010.6000.000VCBO Collector-Base Voltage -40 V 11.0000.300VCEO Collector-E
..2. Size:207K lge
b722.pdf
B772(PNP) TO-126 TransistorTO-1261. EMITTER 2.COLLECTOR 3.BASE 3 21 Features Low speed switching 2.5007.4002.9001.1007.800 Dimensions in inches and (millimeters)1.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.9003.0004.100Symbol Parameter Value Units3.20010.6000.000VCBO Collector-Base Voltage -40 V 11.0000.300VCEO Collector-E
0.1. Size:93K no
ksb722.pdf
PNP Transistor KSB772 datasheetwww.semicon-data.dePNP Transistor KSB772 datasheetwww.semicon-data.dePNP Transistor KSB772 datasheetwww.semicon-data.de
0.2. Size:451K cn shikues
b722s-r b722s-q b722s-p b722s-e.pdf
B722SPNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audiofrequency power amplifier and low speed switchingSOT-23 applications1BASE 2EMITTER 3COLLECTOR OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Colle
0.3. Size:206K inchange semiconductor
2sb722.pdf
isc Silicon PNP Power Transistors 2SB722DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
Datasheet: 2N3200
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