B722 PDF and Equivalents Search

B772(PNP) TO-126 Transistor TO-126 1. EMITTER 2.COLLECTOR 3.BASE 3 2 1 Features Low speed switching 2.500 7.400 2.900 1.100 7.800 Dimensions in inches and (millimeters) 1.500 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.900 3.000 4.100 Symbol Parameter Value Units 3.200 10.600 0.000 VCBO Collector-Base Voltage -40 V 11.000 0.300 VCEO Collector-E... See More ⇒

B772(PNP) TO-126 Transistor TO-126 1. EMITTER 2.COLLECTOR 3.BASE 3 2 1 Features Low speed switching 2.500 7.400 2.900 1.100 7.800 Dimensions in inches and (millimeters) 1.500 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.900 3.000 4.100 Symbol Parameter Value Units 3.200 10.600 0.000 VCBO Collector-Base Voltage -40 V 11.000 0.300 VCEO Collector-E... See More ⇒

PNP Transistor KSB772 datasheet www.semicon-data.de PNP Transistor KSB772 datasheet www.semicon-data.de PNP Transistor KSB772 datasheet www.semicon-data.de ... See More ⇒

B722S PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching SOT-23 applications 1 BASE 2 EMITTER 3 COLLECTOR O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Colle... See More ⇒

isc Silicon PNP Power Transistors 2SB722 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO High Power Dissipation- P = 150W(Max)@T =25 C C High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒