B722 Datasheet. Specs and Replacement
Type Designator: B722 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO126
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B722 Substitution
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B722 datasheet
B772(PNP) TO-126 Transistor TO-126 1. EMITTER 2.COLLECTOR 3.BASE 3 2 1 Features Low speed switching 2.500 7.400 2.900 1.100 7.800 Dimensions in inches and (millimeters) 1.500 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.900 3.000 4.100 Symbol Parameter Value Units 3.200 10.600 0.000 VCBO Collector-Base Voltage -40 V 11.000 0.300 VCEO Collector-E... See More ⇒
B772(PNP) TO-126 Transistor TO-126 1. EMITTER 2.COLLECTOR 3.BASE 3 2 1 Features Low speed switching 2.500 7.400 2.900 1.100 7.800 Dimensions in inches and (millimeters) 1.500 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.900 3.000 4.100 Symbol Parameter Value Units 3.200 10.600 0.000 VCBO Collector-Base Voltage -40 V 11.000 0.300 VCEO Collector-E... See More ⇒
PNP Transistor KSB772 datasheet www.semicon-data.de PNP Transistor KSB772 datasheet www.semicon-data.de PNP Transistor KSB772 datasheet www.semicon-data.de ... See More ⇒
b722s-r b722s-q b722s-p b722s-e.pdf ![]()
B722S PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching SOT-23 applications 1 BASE 2 EMITTER 3 COLLECTOR O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Colle... See More ⇒
Detailed specifications: 9012S, 9013S, B511, B562, B564A, B624, B631K, B709AR, 9014, B764, B772-GR, B772M, B772-O, B772-R, B772-Y, BC637G, BC63916
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