BC858BWT1G Todos los transistores

 

BC858BWT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BC858BWT1G
   Código: 3K
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 220
   Paquete / Cubierta: SOT323
 

 Búsqueda de reemplazo de BC858BWT1G

   - Selección ⓘ de transistores por parámetros

 

BC858BWT1G datasheet

 ..1. Size:78K  onsemi
bc856bwt1g bc857bwt1g bc857cwt1g bc858awt1g bc858bwt1g.pdf pdf_icon

BC858BWT1G

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

 ..2. Size:81K  onsemi
bc858bwt1g.pdf pdf_icon

BC858BWT1G

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

 0.1. Size:278K  lrc
lbc858bwt1g.pdf pdf_icon

BC858BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. Features S-LBC856AWT1G, BWT1G We declare that the material of product c

 0.2. Size:254K  lrc
lbc856awt1g lbc856bwt1g lbc857awt1g lbc857bwt1g lbc857cwt1g lbc858awt1g lbc858bwt1g lbc858cwt1g.pdf pdf_icon

BC858BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product

Otros transistores... BC857M , BC857QAS , BC858ALT1G , BC858AW-G , BC858AWT1G , BC858BLT1G , BC858BLT3G , BC858BW-G , 2SA1837 , BC858CDXV6T1G , BC858CLT1G , BC858CLT3G , BC858CW-G , BC858LT1 , BC868-10 , BC868-16 , BCM61B .

 

 

 


 
↑ Back to Top
.