BF720T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BF720T1G  📄📄 

Código: DC

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.5 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 60 MHz

Ganancia de corriente contínua (hFE): 50

Encapsulados: SOT223

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BF720T1G datasheet

 ..1. Size:106K  onsemi
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BF720T1G

BF720T1G, SBF720T1G, BF720T3G NPN Silicon Transistor Features http //onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique NPN SILICON TRANSISTOR Site and Control Change Requirements SURFACE MOUNT These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS SOT-223 (TO-261) Rating Sym

 ..2. Size:102K  onsemi
bf720t1g sbf720t1g bf720t3g.pdf pdf_icon

BF720T1G

BF720T1G, SBF720T1G, BF720T3G NPN Silicon Transistor Features http //onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique NPN SILICON TRANSISTOR Site and Control Change Requirements SURFACE MOUNT These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS SOT-223 (TO-261) Rating Sym

 0.1. Size:106K  onsemi
sbf720t1g.pdf pdf_icon

BF720T1G

BF720T1G, SBF720T1G, BF720T3G NPN Silicon Transistor Features http //onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique NPN SILICON TRANSISTOR Site and Control Change Requirements SURFACE MOUNT These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS SOT-223 (TO-261) Rating Sym

 7.1. Size:110K  motorola
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BF720T1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BF720T1/D BF720T1 NPN Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 BASE NPN SILICON 1 TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO 300 Vdc 2 3 Collector-Base Voltage VCBO 300 Vdc CASE 318E-04, STYLE 1 Collector-Emitter Voltage VCER 3

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