BTD1805D3
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTD1805D3
Código: D1805
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20
W
Tensión colector-base (Vcb): 150
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Capacitancia de salida (Cc): 50
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
TO126ML
BTD1805D3
Datasheet (PDF)
..1. Size:172K cystek
btd1805d3.pdf 
Spec. No. : C820D3 Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2005.04.20 Page No. : 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805D3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur
7.1. Size:276K cystek
btd1805i3.pdf
Spec. No. : C820I3 Issued Date : 2004.12.19 CYStech Electronics Corp.Revised Date :2012.09.19 Page No. : 1/ 8 Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur
7.2. Size:297K cystek
btd1805j3.pdf
Spec. No. : C820J3 Issued Date : 2004.12.19 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/ 6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 60VIC 5ABTD1805J3 RCESAT 100m Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with ve
7.3. Size:146K cystek
btd1805bt3.pdf
Spec. No. : C820T3 Issued Date : 2007.07.09 CYStech Electronics Corp.Revised Date : Page No. : 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805BT3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features
7.4. Size:249K cystek
btd1805ad3.pdf
Spec. No. : C821D3 Issued Date : 2006.11.23 CYStech Electronics Corp.Revised Date :2012.07.13 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805AD3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu
7.5. Size:256K cystek
btd1805f3.pdf
Spec. No. : C820F3 Issued Date : 2011.12.01 CYStech Electronics Corp.Revised Date : 2011.12.16 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805F3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu
7.6. Size:277K cystek
btd1805fp.pdf
Spec. No. : C820FP Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2013.10.29 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur
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