C2611
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: C2611
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5
W
Tensión colector-base (Vcb): 600
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 0.2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8
MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
SOT89
Búsqueda de reemplazo de transistor bipolar C2611
C2611
Datasheet (PDF)
..1. Size:201K lge
c2611.pdf
C2611(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features power switching applications 2.5007.4002.9001.1007.8001.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.900Symbol Parameter Value Units3.0004.1003.200VCBO Collector -Base Voltage 600 V 10.6000.00011.000VCEO Collector-Emitter Voltage 400 V 0.300VEBO Emit
..2. Size:331K tysemi
c2611.pdf
SMDTy rDIP Type Trans stoCSMD Typpee Tra n s iis tIorsProduct specificationC2611SOT-89 Unit: mm4.50+0.1 1.50+0.1-0.1 -0.1 Features1.80+0.1-0.1 Collector-emitter Voltage: V(BR)CEO=400V Collector Current: IC=0.2A1 2 30.48+0.1 0.53+0.1 0.44+0.1-0.1 -0.1 -0.11. Base+0.13.00-0.12. Collector3. Emiitter Absolute Maximum Ratings Ta = 25Paramete
0.1. Size:30K hitachi
2sc2611.pdf
2SC2611Silicon NPN Triple DiffusedApplicationHigh voltage amplifier TV VIDEO outputOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 1.25
0.2. Size:432K cdil
csc2611.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-126 (SOT-32) Plastic Package CSC2611CSC2611 NPN PLASTIC POWER TRANSISTORHigh voltage Amplifier and TV Video OutputPIN CONFIGURATION1. EMITTER2. COLLECTOR3. BASE123ALL DIMENSIONS IN MMABSOLUTE MAXIMUM RATINGSCollector-base voltage (open emitter) VCBO max. 300 VCollector-emitt
0.3. Size:339K foshan
2sc2611 3da2611.pdf
2SC2611(3DA2611) NPN /SILICON NPN TRANSISTOR :, &[]Purpose: High voltage amplifier, TV video output. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 100 mA C P 1.25 W CT 150 j T -55150
0.4. Size:191K inchange semiconductor
2sc2611.pdf
isc Silicon NPN Power Transistor 2SC2611DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency high voltage amplifierand TV viedo output applications.ABSOLUTE MAXIMUM RATI
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.