C2611(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features power switching applications 2.5007.4002.9001.1007.8001.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.900Symbol Parameter Value Units3.0004.1003.200VCBO Collector -Base Voltage 600 V 10.6000.00011.000VCEO Collector-Emitter Voltage 400 V 0.300VEBO Emit

SMDTy rDIP Type Trans stoCSMD Typpee Tra n s iis tIorsProduct specificationC2611SOT-89 Unit: mm4.50+0.1 1.50+0.1-0.1 -0.1 Features1.80+0.1-0.1 Collector-emitter Voltage: V(BR)CEO=400V Collector Current: IC=0.2A1 2 30.48+0.1 0.53+0.1 0.44+0.1-0.1 -0.1 -0.11. Base+0.13.00-0.12. Collector3. Emiitter Absolute Maximum Ratings Ta = 25Paramete

2SC2611Silicon NPN Triple DiffusedApplicationHigh voltage amplifier TV VIDEO outputOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 1.25

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-126 (SOT-32) Plastic Package CSC2611CSC2611 NPN PLASTIC POWER TRANSISTORHigh voltage Amplifier and TV Video OutputPIN CONFIGURATION1. EMITTER2. COLLECTOR3. BASE123ALL DIMENSIONS IN MMABSOLUTE MAXIMUM RATINGSCollector-base voltage (open emitter) VCBO max. 300 VCollector-emitt

2SC2611(3DA2611) NPN /SILICON NPN TRANSISTOR :, &[]Purpose: High voltage amplifier, TV video output. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 100 mA C P 1.25 W CT 150 j T -55150

isc Silicon NPN Power Transistor 2SC2611DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency high voltage amplifierand TV viedo output applications.ABSOLUTE MAXIMUM RATI