C3150
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: C3150
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 900
V
Tensión colector-emisor (Vce): 800
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 7
MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO220
TO257
Búsqueda de reemplazo de transistor bipolar C3150
C3150
Datasheet (PDF)
..1. Size:128K china
3da3150 c3150.pdf
3DA3150(C3150) NPN PCM TC=25 50 W ICM 3.0 A Tjm 150 Tstg -55~150 V(BR)CBO ICB1mA 900 V V(BR)CEO ICE5mA 800 V V(BR)EBO IEB1mA 7.0 V ICBO VCE=800V 10 A IEBO VEB=5V 10 A VBEsat 1.5 IC=1.5A V IB=0.3A VCEsat 2.0 VC
..2. Size:128K china
c3150.pdf
3DA3150(C3150) NPN PCM TC=25 50 W ICM 3.0 A Tjm 150 Tstg -55~150 V(BR)CBO ICB1mA 900 V V(BR)CEO ICE5mA 800 V V(BR)EBO IEB1mA 7.0 V ICBO VCE=800V 10 A IEBO VEB=5V 10 A VBEsat 1.5 IC=1.5A V IB=0.3A VCEsat 2.0 VC
0.1. Size:102K sanyo
2sc3150.pdf
Ordering number:EN1069CNPN Triple Diffused Planar Silicon Transistor2SC3150800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3150]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParame
0.2. Size:346K lzg
2sc3150a.pdf
2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR : Purpose: Switching regulator applications. : Features: High V , high speed switching, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1000 V CBO V 750 V
0.3. Size:174K cn sptech
2sc3150k 2sc3150l 2sc3150m.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3150DESCRIPTIONHigh Breakdown Voltage-: V = 900V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 900 VCBOV Collector-Emitter Voltage 800 V
0.4. Size:216K inchange semiconductor
2sc3150.pdf
isc Silicon NPN Power Transistor 2SC3150DESCRIPTIONHigh Breakdown Voltage-: V = 900V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
Otros transistores... 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
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, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.