C3150 Datasheet. Equivalente

 ..1. Size:128K  china
 3da3150 c3150.pdf

3DA3150(C3150) NPN PCM TC=25 50 W ICM 3.0 A Tjm 150 Tstg -55 150 V(BR)CBO ICB 1mA 900 V V(BR)CEO ICE 5mA 800 V V(BR)EBO IEB 1mA 7.0 V ICBO VCE=800V 10 A IEBO VEB=5V 10 A VBEsat 1.5 IC=1.5A V IB=0.3A VCEsat 2.0 VC

 ..2. Size:128K  china
 c3150.pdf

3DA3150(C3150) NPN PCM TC=25 50 W ICM 3.0 A Tjm 150 Tstg -55 150 V(BR)CBO ICB 1mA 900 V V(BR)CEO ICE 5mA 800 V V(BR)EBO IEB 1mA 7.0 V ICBO VCE=800V 10 A IEBO VEB=5V 10 A VBEsat 1.5 IC=1.5A V IB=0.3A VCEsat 2.0 VC

 0.1. Size:102K  sanyo
 2sc3150.pdf

Ordering number EN1069C NPN Triple Diffused Planar Silicon Transistor 2SC3150 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3150] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parame

 0.2. Size:346K  lzg
 2sc3150a.pdf

2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR Purpose Switching regulator applications. Features High V , high speed switching, wide ASO. CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 1000 V CBO V 750 V

 0.3. Size:174K  cn sptech
 2sc3150k 2sc3150l 2sc3150m.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3150 DESCRIPTION High Breakdown Voltage- V = 900V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 900 V CBO V Collector-Emitter Voltage 800 V

 0.4. Size:216K  inchange semiconductor
 2sc3150.pdf

isc Silicon NPN Power Transistor 2SC3150 DESCRIPTION High Breakdown Voltage- V = 900V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base