C3150 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

3DA3150(C3150) NPN PCM TC=25 50 W ICM 3.0 A Tjm 150 Tstg -55~150 V(BR)CBO ICB1mA 900 V V(BR)CEO ICE5mA 800 V V(BR)EBO IEB1mA 7.0 V ICBO VCE=800V 10 A IEBO VEB=5V 10 A VBEsat 1.5 IC=1.5A V IB=0.3A VCEsat 2.0 VC

3DA3150(C3150) NPN PCM TC=25 50 W ICM 3.0 A Tjm 150 Tstg -55~150 V(BR)CBO ICB1mA 900 V V(BR)CEO ICE5mA 800 V V(BR)EBO IEB1mA 7.0 V ICBO VCE=800V 10 A IEBO VEB=5V 10 A VBEsat 1.5 IC=1.5A V IB=0.3A VCEsat 2.0 VC

Ordering number:EN1069CNPN Triple Diffused Planar Silicon Transistor2SC3150800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3150]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParame

2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR : Purpose: Switching regulator applications. : Features: High V , high speed switching, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1000 V CBO V 750 V

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3150DESCRIPTIONHigh Breakdown Voltage-: V = 900V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 900 VCBOV Collector-Emitter Voltage 800 V

isc Silicon NPN Power Transistor 2SC3150DESCRIPTIONHigh Breakdown Voltage-: V = 900V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base