CH867UPNGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CH867UPNGP
Código: U10
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT363
Búsqueda de reemplazo de transistor bipolar CH867UPNGP
CH867UPNGP Datasheet (PDF)
ch867upngp.pdf
CHENMKO ENTERPRISE CO.,LTDCH867UPNGPSURFACE MOUNT PNP&NPN Muti-Chip General Purpose TransistorVOLTAGE 50 Volts CURRENT 150 mAmperesAPPLICATION* AF input stages and driver applicationon equipment.* Other general purpose applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High current gain. * Suitable for high packing density.* Low colloector
ch867unpgp.pdf
CHENMKO ENTERPRISE CO.,LTDCH867UNPGPSURFACE MOUNT PNP&NPN Muti-Chip General Purpose TransistorVOLTAGE 50 Volts CURRENT 150 mAmperesAPPLICATION* AF input stages and driver applicationon equipment.* Other general purpose applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High current gain. * Suitable for high packing density.* Low colloector
ech8673.pdf
ECH8673Ordering number : ENA1892SANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceECH8673ApplicationsFeatures ON-resistance Nch: RDS(on)1=65m (typ.), Pch: ON-resistance RDS(on)1=125m (typ.) 4V drive Halogen free compliance Nch+Pch MOSFETSpecifications at Ta=25CAbsolute Maximum RatingsParamet
ech8674.pdf
ECH8674Ordering number : ENA1436SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8674ApplicationsFeatures 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --1
ech8675.pdf
ECH8675Ordering number : ENA1437SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8675ApplicationsFeatures 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --2
ech8671.pdf
ECH8671Ordering number : ENA1456SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8671ApplicationsFeatures 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --1
ech8672.pdf
ECH8672Ordering number : ENA1465SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8672ApplicationsFeatures 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --2
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050