CH867UPNGP Datasheet, Equivalent, Cross Reference Search
Type Designator: CH867UPNGP
SMD Transistor Code: U10
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT363
CH867UPNGP Transistor Equivalent Substitute - Cross-Reference Search
CH867UPNGP Datasheet (PDF)
ch867upngp.pdf
CHENMKO ENTERPRISE CO.,LTDCH867UPNGPSURFACE MOUNT PNP&NPN Muti-Chip General Purpose TransistorVOLTAGE 50 Volts CURRENT 150 mAmperesAPPLICATION* AF input stages and driver applicationon equipment.* Other general purpose applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High current gain. * Suitable for high packing density.* Low colloector
ch867unpgp.pdf
CHENMKO ENTERPRISE CO.,LTDCH867UNPGPSURFACE MOUNT PNP&NPN Muti-Chip General Purpose TransistorVOLTAGE 50 Volts CURRENT 150 mAmperesAPPLICATION* AF input stages and driver applicationon equipment.* Other general purpose applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High current gain. * Suitable for high packing density.* Low colloector
ech8673.pdf
ECH8673Ordering number : ENA1892SANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceECH8673ApplicationsFeatures ON-resistance Nch: RDS(on)1=65m (typ.), Pch: ON-resistance RDS(on)1=125m (typ.) 4V drive Halogen free compliance Nch+Pch MOSFETSpecifications at Ta=25CAbsolute Maximum RatingsParamet
ech8674.pdf
ECH8674Ordering number : ENA1436SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8674ApplicationsFeatures 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --1
ech8675.pdf
ECH8675Ordering number : ENA1437SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8675ApplicationsFeatures 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --2
ech8671.pdf
ECH8671Ordering number : ENA1456SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8671ApplicationsFeatures 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --1
ech8672.pdf
ECH8672Ordering number : ENA1465SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8672ApplicationsFeatures 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --2
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
