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CMPT591E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CMPT591E

Código: C59

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz

Capacitancia de salida (Cc): 10 pF

Ganancia de corriente contínua (hfe): 200

Empaquetado / Estuche: SOT-23

Búsqueda de reemplazo de transistor bipolar CMPT591E

 

CMPT591E Datasheet (PDF)

1.1. cmpt591e.pdf Size:391K _central

CMPT591E
CMPT591E

CMPT591E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. The CMPT591E features Low VCE(SAT), high hFE, and

5.1. cmpt5087e cmpt5088e series.pdf Size:329K _central

CMPT591E
CMPT591E

CMPT5087E PNP CMPT5088E NPN www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION: COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT5087E SILICON TRANSISTORS and CMPT5088E, are Silicon transistors in an epoxy molded surface mount package with enhanced specifications designed for applications requiring high gain and low noise. MARKING CODES: CMPT5087E: C2QE CMPT5088

5.2. cmpt5086 cmpt5087.pdf Size:324K _central

CMPT591E
CMPT591E

CMPT5086 CMPT5087 www.centralsemi.com SURFACE MOUNT DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5086 and CMPT5087 are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise. MARKING CODES: CMPT5086: C2P CMPT5087: C2Q SOT-23 CASE MAXIMUM RAT

 5.3. cmpt5087e.pdf Size:329K _central

CMPT591E
CMPT591E

CMPT5087E PNP CMPT5088E NPN www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION: COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT5087E SILICON TRANSISTORS and CMPT5088E, are Silicon transistors in an epoxy molded surface mount package with enhanced specifications designed for applications requiring high gain and low noise. MARKING CODES: CMPT5087E: C2QE CMPT5088

5.4. cmpt5551hc.pdf Size:321K _central

CMPT591E
CMPT591E

CMPT5551HC www.centralsemi.com SURFACE MOUNT HIGH CURRENT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING CODE: 1FHC SOT-23 CASE MAXIMUM RATINGS:

 5.5. cmpt5551.pdf Size:323K _central

CMPT591E
CMPT591E

CMPT5551 www.centralsemi.com SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE: 1FF SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage

5.6. cmpt5401.pdf Size:324K _central

CMPT591E
CMPT591E

CMPT5401 www.centralsemi.com SURFACE MOUNT DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE: C2L SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VC

5.7. cmpt5088 cmpt5089.pdf Size:324K _central

CMPT591E
CMPT591E

CMPT5088 CMPT5089 www.centralsemi.com SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5088 and CMPT5089 are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING CODES: CMPT5088: C1Q CMPT5089: C1R SOT-23 CASE MAX

5.8. cmpt5401e.pdf Size:329K _central

CMPT591E
CMPT591E

CMPT5401E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5401E is an PNP Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging. MARKING CODE: C540 FEATURES: • High Collector Breakdown Voltag

5.9. cmpt5088e.pdf Size:329K _central

CMPT591E
CMPT591E

CMPT5087E PNP CMPT5088E NPN www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION: COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT5087E SILICON TRANSISTORS and CMPT5088E, are Silicon transistors in an epoxy molded surface mount package with enhanced specifications designed for applications requiring high gain and low noise. MARKING CODES: CMPT5087E: C2QE CMPT5088

5.10. cmpt5551e.pdf Size:329K _central

CMPT591E
CMPT591E

CMPT5551E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5551E is an NPN Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging. MARKING CODE: C555 FEATURES: • High Collector Breakdown Voltag

5.11. cmpt5179.pdf Size:323K _central

CMPT591E
CMPT591E

CMPT5179 www.centralsemi.com SURFACE MOUNT DESCRIPTION: NPN SILICON RF TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise, high frequency amplifier and high output oscillator applications. MARKING CODE: C7H SOT-23 CASE MAXIMUM RATINGS: (TA

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