Биполярный транзистор CMPT591E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: CMPT591E
Маркировка: C59
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: SOT-23
CMPT591E Datasheet (PDF)
cmpt591e.pdf
CMPT591Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. The CMPT591E features Low VCE(SAT), high hFE, and
cmpt5179.pdf
CMPT5179www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON RF TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise, high frequency amplifier and high output oscillator applications.MARKING CODE: C7HSOT-23 CASEMAXIMUM RATINGS: (TA
cmpt5401.pdf
CMPT5401www.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.MARKING CODE: C2LSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage VC
cmpt5551.pdf
CMPT5551www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE: 1FFSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage
cmpt5086 cmpt5087.pdf
CMPT5086CMPT5087www.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5086 and CMPT5087 are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise.MARKING CODES: CMPT5086: C2P CMPT5087: C2QSOT-23 CASEMAXIMUM RAT
cmpt5088e.pdf
CMPT5087E PNPCMPT5088E NPNwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT5087E SILICON TRANSISTORSand CMPT5088E, are Silicon transistors in an epoxy molded surface mount package with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMPT5087E: C2QE CMPT5088
cmpt5087e.pdf
CMPT5087E PNPCMPT5088E NPNwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT5087E SILICON TRANSISTORSand CMPT5088E, are Silicon transistors in an epoxy molded surface mount package with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMPT5087E: C2QE CMPT5088
cmpt5551e.pdf
CMPT5551Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5551E is an NPN Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging.MARKING CODE: C555FEATURES: High Collector Breakdown Voltag
cmpt5088 cmpt5089.pdf
CMPT5088CMPT5089www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5088 and CMPT5089 are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications.MARKING CODES: CMPT5088: C1QCMPT5089: C1RSOT-23 CASEMAX
cmpt5087e cmpt5088e series.pdf
CMPT5087E PNPCMPT5088E NPNwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT5087E SILICON TRANSISTORSand CMPT5088E, are Silicon transistors in an epoxy molded surface mount package with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMPT5087E: C2QE CMPT5088
cmpt5551hc.pdf
CMPT5551HCwww.centralsemi.comSURFACE MOUNTHIGH CURRENTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING CODE: 1FHCSOT-23 CASEMAXIMUM RATINGS:
cmpt5401e.pdf
CMPT5401Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5401E is an PNP Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging.MARKING CODE: C540FEATURES: High Collector Breakdown Voltag
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
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