All Transistors. CMPT591E Datasheet

 

CMPT591E Datasheet, Equivalent, Cross Reference Search


   Type Designator: CMPT591E
   SMD Transistor Code: C59
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT-23

 CMPT591E Transistor Equivalent Substitute - Cross-Reference Search

   

CMPT591E Datasheet (PDF)

 ..1. Size:391K  central
cmpt591e.pdf

CMPT591E
CMPT591E

CMPT591Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. The CMPT591E features Low VCE(SAT), high hFE, and

 9.1. Size:323K  central
cmpt5179.pdf

CMPT591E
CMPT591E

CMPT5179www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON RF TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise, high frequency amplifier and high output oscillator applications.MARKING CODE: C7HSOT-23 CASEMAXIMUM RATINGS: (TA

 9.2. Size:324K  central
cmpt5401.pdf

CMPT591E
CMPT591E

CMPT5401www.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.MARKING CODE: C2LSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage VC

 9.3. Size:323K  central
cmpt5551.pdf

CMPT591E
CMPT591E

CMPT5551www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE: 1FFSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage

 9.4. Size:324K  central
cmpt5086 cmpt5087.pdf

CMPT591E
CMPT591E

CMPT5086CMPT5087www.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5086 and CMPT5087 are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise.MARKING CODES: CMPT5086: C2P CMPT5087: C2QSOT-23 CASEMAXIMUM RAT

 9.5. Size:329K  central
cmpt5088e.pdf

CMPT591E
CMPT591E

CMPT5087E PNPCMPT5088E NPNwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT5087E SILICON TRANSISTORSand CMPT5088E, are Silicon transistors in an epoxy molded surface mount package with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMPT5087E: C2QE CMPT5088

 9.6. Size:329K  central
cmpt5087e.pdf

CMPT591E
CMPT591E

CMPT5087E PNPCMPT5088E NPNwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT5087E SILICON TRANSISTORSand CMPT5088E, are Silicon transistors in an epoxy molded surface mount package with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMPT5087E: C2QE CMPT5088

 9.7. Size:329K  central
cmpt5551e.pdf

CMPT591E
CMPT591E

CMPT5551Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5551E is an NPN Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging.MARKING CODE: C555FEATURES: High Collector Breakdown Voltag

 9.8. Size:324K  central
cmpt5088 cmpt5089.pdf

CMPT591E
CMPT591E

CMPT5088CMPT5089www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5088 and CMPT5089 are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications.MARKING CODES: CMPT5088: C1QCMPT5089: C1RSOT-23 CASEMAX

 9.9. Size:329K  central
cmpt5087e cmpt5088e series.pdf

CMPT591E
CMPT591E

CMPT5087E PNPCMPT5088E NPNwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT5087E SILICON TRANSISTORSand CMPT5088E, are Silicon transistors in an epoxy molded surface mount package with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMPT5087E: C2QE CMPT5088

 9.10. Size:321K  central
cmpt5551hc.pdf

CMPT591E
CMPT591E

CMPT5551HCwww.centralsemi.comSURFACE MOUNTHIGH CURRENTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING CODE: 1FHCSOT-23 CASEMAXIMUM RATINGS:

 9.11. Size:329K  central
cmpt5401e.pdf

CMPT591E
CMPT591E

CMPT5401Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5401E is an PNP Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging.MARKING CODE: C540FEATURES: High Collector Breakdown Voltag

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , A1941 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
Back to Top