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D45H8G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: D45H8G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 70 W
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 40 MHz
   Capacitancia de salida (Cc): 160 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO-220

 Búsqueda de reemplazo de transistor bipolar D45H8G

 

D45H8G Datasheet (PDF)

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d45h8g.pdf pdf_icon

D45H8G

D44H Series (NPN), D45H Series (PNP) Preferred Devices Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such http //onsemi.com as output or driver stages in applications such as switching regulators, converters and power amplifiers. 10 AMP COMPLEMENTARY Features SI

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d45h5 d45h8 d45h11.pdf pdf_icon

D45H8G

D45H5 D45H8 D45H11 PNP SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE SWITCHING AND AMPLIFIER 3 2 1 DESCRIPTION The D45H5, D45H8 and D45H11 are silicon TO-220 multiepitaxial planar PNP transistors mounted in Jedec TO-220 plastic package. They

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D45H8G

D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors . Features Low collector-emitter saturation voltage TAB Fast switching speed Applications Power amplifier 3 2 Switching circuits 1 TO-220 Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagram general p

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d44h8 d44h11 d45h8-d45h11.pdf pdf_icon

D45H8G

D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors . Features Low collector-emitter saturation voltage TAB Fast switching speed Applications Power amplifier 3 2 Switching circuits 1 TO-220 Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagram general p

Otros transistores... D29D30 , D304X , D3DD9D , D44H11G , D44H8G , D44VH10G , D45H11G , D45H1B , MJE340 , D45VH10G , D471A , D596 , D882H , D882M , D965ASS , D965-R , D965SS .

 

 
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