D45H8G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: D45H8G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70 W
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Capacitancia de salida (Cc): 160 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de transistor bipolar D45H8G
D45H8G Datasheet (PDF)
d45h8g.pdf
D44H Series (NPN),D45H Series (PNP)Preferred DevicesComplementary SiliconPower TransistorsThese series of plastic, silicon NPN and PNP power transistors canbe used as general purpose power amplification and switching suchhttp://onsemi.comas output or driver stages in applications such as switching regulators,converters and power amplifiers.10 AMP COMPLEMENTARYFeaturesSI
d45h5 d45h8 d45h11.pdf
D45H5D45H8 \ D45H11PNP SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATIONVOLTAGE FAST SWITCHING SPEEDAPPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE SWITCHING ANDAMPLIFIER 321DESCRIPTION The D45H5, D45H8 and D45H11 are siliconTO-220multiepitaxial planar PNP transistors mounted inJedec TO-220 plastic package.They
d44h8 d44h11 d45h8 d45h11.pdf
D44H8 - D44H11D45H8 - D45H11Complementary power transistors .Features Low collector-emitter saturation voltageTAB Fast switching speedApplications Power amplifier32 Switching circuits1TO-220DescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral p
d44h8 d44h11 d45h8-d45h11.pdf
D44H8 - D44H11D45H8 - D45H11Complementary power transistors .Features Low collector-emitter saturation voltageTAB Fast switching speedApplications Power amplifier32 Switching circuits1TO-220DescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral p
d45h8 nzt45h8.pdf
D45H8 NZT45H8CEBC CEBTO-220 SOT-223PNP Power AmplifierThis device is designed for power amplifier, regulator and switchingcircuits where speed is important. Sourced from Process 5Q.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VIC Collector Current - Continuous 8.0 ATJ, Tstg Operating and St
d45h8 nzt45h8.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
d44h8 d45h8 d44h11 d45h11.pdf
D44H Series (NPN),D45H Series (PNP)Complementary SiliconPower TransistorsThese series of plastic, silicon NPN and PNP power transistors canbe used as general purpose power amplification and switching such ashttp://onsemi.comoutput or driver stages in applications such as switching regulators,converters and power amplifiers.10 AMP COMPLEMENTARYSILICON POWER Features Lo
d45h8.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors D45H8 DESCRIPTION With TO-220C package Fast switching speeds Low collector saturation voltage APPLICATIONS For general purpose power amplifications and switching regulators,converters and power amplifiers applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 moun
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: ZTX949
History: ZTX949
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