D45H8G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: D45H8G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70 W
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Capacitancia de salida (Cc): 160 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de transistor bipolar D45H8G
D45H8G Datasheet (PDF)
d45h8g.pdf
D44H Series (NPN), D45H Series (PNP) Preferred Devices Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such http //onsemi.com as output or driver stages in applications such as switching regulators, converters and power amplifiers. 10 AMP COMPLEMENTARY Features SI
d45h5 d45h8 d45h11.pdf
D45H5 D45H8 D45H11 PNP SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE SWITCHING AND AMPLIFIER 3 2 1 DESCRIPTION The D45H5, D45H8 and D45H11 are silicon TO-220 multiepitaxial planar PNP transistors mounted in Jedec TO-220 plastic package. They
d44h8 d44h11 d45h8 d45h11.pdf
D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors . Features Low collector-emitter saturation voltage TAB Fast switching speed Applications Power amplifier 3 2 Switching circuits 1 TO-220 Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagram general p
d44h8 d44h11 d45h8-d45h11.pdf
D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors . Features Low collector-emitter saturation voltage TAB Fast switching speed Applications Power amplifier 3 2 Switching circuits 1 TO-220 Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagram general p
Otros transistores... D29D30 , D304X , D3DD9D , D44H11G , D44H8G , D44VH10G , D45H11G , D45H1B , MJE340 , D45VH10G , D471A , D596 , D882H , D882M , D965ASS , D965-R , D965SS .
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