All Transistors. D45H8G Datasheet

 

D45H8G Datasheet and Replacement


   Type Designator: D45H8G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 160 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO-220
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D45H8G Datasheet (PDF)

 ..1. Size:114K  onsemi
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D45H8G

D44H Series (NPN),D45H Series (PNP)Preferred DevicesComplementary SiliconPower TransistorsThese series of plastic, silicon NPN and PNP power transistors canbe used as general purpose power amplification and switching suchhttp://onsemi.comas output or driver stages in applications such as switching regulators,converters and power amplifiers.10 AMP COMPLEMENTARYFeaturesSI

 9.1. Size:49K  st
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D45H8G

D45H5D45H8 \ D45H11PNP SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATIONVOLTAGE FAST SWITCHING SPEEDAPPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE SWITCHING ANDAMPLIFIER 321DESCRIPTION The D45H5, D45H8 and D45H11 are siliconTO-220multiepitaxial planar PNP transistors mounted inJedec TO-220 plastic package.They

 9.2. Size:182K  st
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D45H8G

D44H8 - D44H11D45H8 - D45H11Complementary power transistors .Features Low collector-emitter saturation voltageTAB Fast switching speedApplications Power amplifier32 Switching circuits1TO-220DescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral p

 9.3. Size:180K  st
d44h8 d44h11 d45h8-d45h11.pdf pdf_icon

D45H8G

D44H8 - D44H11D45H8 - D45H11Complementary power transistors .Features Low collector-emitter saturation voltageTAB Fast switching speedApplications Power amplifier32 Switching circuits1TO-220DescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral p

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: CD95 | GES6010A | BD537J | BD137-16 | HSE307 | BD487 | 2SC5419

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