DK30 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DK30
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO-3
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DK30 datasheet
dk30.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK30 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. Good voltage resistance. 3. Implementation of standards GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switch
3dk3039.pdf
3DK3039(2SC3039) NPN PCM Tc=25 50 W ICM 7 A Tjm 175 Tstg -55 150 Rth 3 /W V(BR)CBO ICB=2mA 500 V V(BR)CEO ICE=2mA 400 V V(BR)EBO IEB=2mA 7.0 V ICBO VCB=150V 10 A IEBO VEB=150V 10 A IC=1A VBEsat 1.5 V IB=0.1A VCEsat 1.0
dk300.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK300 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switch circuit,switching volta
dk301.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK301 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards GJB33A -97. 4. Use for high power switch circuit,switching voltage-stabilized sourcefy
Otros transistores... DK10 , DK100 , DK101 , DK11 , DK150 , DK151 , DK200 , DK201 , BC556 , DK300 , DK301 , DK31 , DK313 , DK319 , DK50 , DK51 , DMA20101 .
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