DK30 Todos los transistores

 

DK30 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DK30
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO-3
 

 Búsqueda de reemplazo de DK30

   - Selección ⓘ de transistores por parámetros

 

DK30 Datasheet (PDF)

 ..1. Size:25K  shaanxi
dk30.pdf pdf_icon

DK30

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China DK30NPN Silicon High Power Switching Transistor Features: 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. Good voltage resistance. 3. Implementation of standards: GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switch

 0.1. Size:190K  china
3dk3039.pdf pdf_icon

DK30

3DK3039(2SC3039) NPN PCM Tc=25 50 W ICM 7 A Tjm 175 Tstg -55~150 Rth 3 /W V(BR)CBO ICB=2mA 500 V V(BR)CEO ICE=2mA 400 V V(BR)EBO IEB=2mA 7.0 V ICBO VCB=150V 10 A IEBO VEB=150V 10 A IC=1A VBEsat 1.5 V IB=0.1A VCEsat 1.0

 0.2. Size:24K  shaanxi
dk300.pdf pdf_icon

DK30

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China DK300NPN Silicon High Power Switching Transistor Features: 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards: GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switch circuit,switching volta

 0.3. Size:24K  shaanxi
dk301.pdf pdf_icon

DK30

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China DK301NPN Silicon High Power Switching Transistor Features: 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards: GJB33A -97. 4. Use for high power switch circuit,switching voltage-stabilized sourcefy

Otros transistores... DK10 , DK100 , DK101 , DK11 , DK150 , DK151 , DK200 , DK201 , BC639 , DK300 , DK301 , DK31 , DK313 , DK319 , DK50 , DK51 , DMA20101 .

 

 
Back to Top

 


 
.