DK30 Datasheet. Specs and Replacement
Type Designator: DK30 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO-3
DK30 Substitution
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DK30 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK30 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. Good voltage resistance. 3. Implementation of standards GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switch... See More ⇒
3DK3039(2SC3039) NPN PCM Tc=25 50 W ICM 7 A Tjm 175 Tstg -55 150 Rth 3 /W V(BR)CBO ICB=2mA 500 V V(BR)CEO ICE=2mA 400 V V(BR)EBO IEB=2mA 7.0 V ICBO VCB=150V 10 A IEBO VEB=150V 10 A IC=1A VBEsat 1.5 V IB=0.1A VCEsat 1.0 ... See More ⇒
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK300 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switch circuit,switching volta... See More ⇒
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK301 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards GJB33A -97. 4. Use for high power switch circuit,switching voltage-stabilized sourcefy... See More ⇒
Detailed specifications: DK10, DK100, DK101, DK11, DK150, DK151, DK200, DK201, BC556, DK300, DK301, DK31, DK313, DK319, DK50, DK51, DMA20101
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