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DK50 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DK50
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO-3
 

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DK50 Datasheet (PDF)

 ..1. Size:25K  shaanxi
 dk50.pdf pdf_icon

DK50

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China DK50NPN Silicon High Power Switching Transistor Features: 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. Good voltage resistance. 3. Implementation of standards: GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switch

 0.1. Size:113K  china
 3dk50.pdf pdf_icon

DK50

3DK50 NPN PCM TC=25 150 W ICM 25 A Tjm 175 Tstg -55~150 RthJC 1.17 /W V(BR)CBO ICB=3mA 200 V V(BR)CEO ICE=3mA 125 V V(BR)EBO IEB=3mA 7.0 V ICBO VCB=200V 1.0 mA ICEO VCE=10V 1.0 mA IEBO VEB=5V 1 mA VBEsat 1.6 IC=5A V IB

 0.2. Size:237K  inchange semiconductor
 3dk501d.pdf pdf_icon

DK50

isc Silicon NPN Power Transistor 3DK501DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min.)(BR)CEODC Current Gain: h = 20(Min.)@I = 10AFE CCollector-Emitter Saturation Voltage-: V )= 1.2V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , regul

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: MJ10005P | DK151 | BUV98AV

 

 
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