DK50 Todos los transistores

 

DK50 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DK50

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO-3

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DK50 datasheet

 ..1. Size:25K  shaanxi
dk50.pdf pdf_icon

DK50

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK50 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. Good voltage resistance. 3. Implementation of standards GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switch

 0.1. Size:113K  china
3dk50.pdf pdf_icon

DK50

3DK50 NPN PCM TC=25 150 W ICM 25 A Tjm 175 Tstg -55 150 RthJC 1.17 /W V(BR)CBO ICB=3mA 200 V V(BR)CEO ICE=3mA 125 V V(BR)EBO IEB=3mA 7.0 V ICBO VCB=200V 1.0 mA ICEO VCE=10V 1.0 mA IEBO VEB=5V 1 mA VBEsat 1.6 IC=5A V IB

 0.2. Size:237K  inchange semiconductor
3dk501d.pdf pdf_icon

DK50

isc Silicon NPN Power Transistor 3DK501D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min.) (BR)CEO DC Current Gain h = 20(Min.)@I = 10A FE C Collector-Emitter Saturation Voltage- V )= 1.2V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , regul

Otros transistores... DK200 , DK201 , DK30 , DK300 , DK301 , DK31 , DK313 , DK319 , 2N2907 , DK51 , DMA20101 , DMA20201 , DMA20401 , DMA20402 , DMA20403 , DMA204A0 , DMA20601 .

History: 2SC2094 | 2SD1353BL | DK51

 

 

 


History: 2SC2094 | 2SD1353BL | DK51

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