DK50 Datasheet. Specs and Replacement
Type Designator: DK50 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO-3
DK50 Substitution
- BJT ⓘ Cross-Reference Search
DK50 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK50 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. Good voltage resistance. 3. Implementation of standards GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switch... See More ⇒
3DK50 NPN PCM TC=25 150 W ICM 25 A Tjm 175 Tstg -55 150 RthJC 1.17 /W V(BR)CBO ICB=3mA 200 V V(BR)CEO ICE=3mA 125 V V(BR)EBO IEB=3mA 7.0 V ICBO VCB=200V 1.0 mA ICEO VCE=10V 1.0 mA IEBO VEB=5V 1 mA VBEsat 1.6 IC=5A V IB... See More ⇒
isc Silicon NPN Power Transistor 3DK501D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min.) (BR)CEO DC Current Gain h = 20(Min.)@I = 10A FE C Collector-Emitter Saturation Voltage- V )= 1.2V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , regul... See More ⇒
Detailed specifications: DK200, DK201, DK30, DK300, DK301, DK31, DK313, DK319, 2N2907, DK51, DMA20101, DMA20201, DMA20401, DMA20402, DMA20403, DMA204A0, DMA20601
Keywords - DK50 pdf specs
DK50 cross reference
DK50 equivalent finder
DK50 pdf lookup
DK50 substitution
DK50 replacement
