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DMBT9018 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMBT9018
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 15 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 600 MHz
   Ganancia de corriente contínua (hfe): 28
   Paquete / Cubierta: SOT-23
 

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DMBT9018 Datasheet (PDF)

 ..1. Size:77K  dc components
 dmbt9018.pdf pdf_icon

DMBT9018

DC COMPONENTS CO., LTD.DMBT9018DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in AM/FM amplifier and local oscillator of FM/VHF tuner.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC) .045(1.15).034

 7.1. Size:173K  dc components
 dmbt9012.pdf pdf_icon

DMBT9018

DC COMPONENTS CO., LTD.DMBT9012DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for low frequency amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 33 = Collector .063(1.60) .108(0.65).055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).091(2.30)Cha

 7.2. Size:144K  dc components
 dmbt9013.pdf pdf_icon

DMBT9018

DC COMPONENTS CO., LTD.DMBT9013DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for low frequency amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 33 = Collector .063(1.60) .108(0.65).055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).091(2.30)Cha

 7.3. Size:157K  dc components
 dmbt9014.pdf pdf_icon

DMBT9018

DC COMPONENTS CO., LTD.DMBT9014DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in pre-amplifier of low level and low noise.SOT-23.020(0.50).012(0.30)Pinning1 = Base 32 = Emitter .063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).

MOSTRAR MÁS

Otros transistores... DMBT4403 , DMBT5401 , DMBT5551 , DMBT8050 , DMBT8550 , DMBT9012 , DMBT9013 , DMBT9014 , TIP36C , DMBTA42 , DMBTA44 , DMC20101 , DMC201A0 , DMC201E0 , DMC20201 , DMC20401 , DMC20402 .

History: 2T3512 | BD799 | BLU33 | BC341 | 3DD13007MD-C | 2SD123 | CK870

 

 
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