All Transistors. DMBT9018 Datasheet

 

DMBT9018 Datasheet, Equivalent, Cross Reference Search


   Type Designator: DMBT9018
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 600 MHz
   Forward Current Transfer Ratio (hFE), MIN: 28
   Noise Figure, dB: -
   Package: SOT-23

 DMBT9018 Transistor Equivalent Substitute - Cross-Reference Search

   

DMBT9018 Datasheet (PDF)

 ..1. Size:77K  dc components
dmbt9018.pdf

DMBT9018

DC COMPONENTS CO., LTD.DMBT9018DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in AM/FM amplifier and local oscillator of FM/VHF tuner.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC) .045(1.15).034

 7.1. Size:173K  dc components
dmbt9012.pdf

DMBT9018
DMBT9018

DC COMPONENTS CO., LTD.DMBT9012DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for low frequency amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 33 = Collector .063(1.60) .108(0.65).055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).091(2.30)Cha

 7.2. Size:144K  dc components
dmbt9013.pdf

DMBT9018
DMBT9018

DC COMPONENTS CO., LTD.DMBT9013DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for low frequency amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 33 = Collector .063(1.60) .108(0.65).055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).091(2.30)Cha

 7.3. Size:157K  dc components
dmbt9014.pdf

DMBT9018
DMBT9018

DC COMPONENTS CO., LTD.DMBT9014DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in pre-amplifier of low level and low noise.SOT-23.020(0.50).012(0.30)Pinning1 = Base 32 = Emitter .063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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