DMBT9018 Specs and Replacement

Type Designator: DMBT9018

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 600 MHz

Forward Current Transfer Ratio (hFE), MIN: 28

Noise Figure, dB: -

Package: SOT-23

 DMBT9018 Substitution

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DMBT9018 datasheet

 ..1. Size:77K  dc components

 dmbt9018.pdf pdf_icon

DMBT9018

DC COMPONENTS CO., LTD. DMBT9018 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in AM/FM amplifier and local oscillator of FM/VHF tuner. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034... See More ⇒

 7.1. Size:173K  dc components

 dmbt9012.pdf pdf_icon

DMBT9018

DC COMPONENTS CO., LTD. DMBT9012 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency amplifier applications. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 3 = Collector .063(1.60) .108(0.65) .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.85) .091(2.30) Cha... See More ⇒

 7.2. Size:144K  dc components

 dmbt9013.pdf pdf_icon

DMBT9018

DC COMPONENTS CO., LTD. DMBT9013 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency amplifier applications. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 3 = Collector .063(1.60) .108(0.65) .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.85) .091(2.30) Cha... See More ⇒

 7.3. Size:157K  dc components

 dmbt9014.pdf pdf_icon

DMBT9018

DC COMPONENTS CO., LTD. DMBT9014 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in pre-amplifier of low level and low noise. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 3 2 = Emitter .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.85) .... See More ⇒

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Detailed specifications: DMBT4403, DMBT5401, DMBT5551, DMBT8050, DMBT8550, DMBT9012, DMBT9013, DMBT9014, D882P, DMBTA42, DMBTA44, DMC20101, DMC201A0, DMC201E0, DMC20201, DMC20401, DMC20402

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