L2SA2030M3T5G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: L2SA2030M3T5G  📄📄 

Código: BW

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 260 MHz

Capacitancia de salida (Cc): 6.5 pF

Ganancia de corriente contínua (hFE): 270

Encapsulados: SOT-723

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L2SA2030M3T5G datasheet

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L2SA2030M3T5G

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G 1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5G VCE (sat) 250mA At IC = -200mA / IB = -10mA

 0.1. Size:125K  lrc
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L2SA2030M3T5G

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G 1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5G VCE (sat) 250mA At IC = -200mA / IB = -10mA

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 l2sa2029rm3t5g.pdf pdf_icon

L2SA2030M3T5G

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 l2sa2029qm3t5g.pdf pdf_icon

L2SA2030M3T5G

MOSTRAR MÁS

Otros transistores... EMT1DXV6T5G, EMT1FHA, EMT2, EMT2FHA, EMT3, EMT3FHA, L2SA1577QT1G, L2SA1577RT1G, 2SC2625, L2SC3837QLT1G, L2SC3837T1G, L2SC3838QLT1G, L2SC4226T1G, L2SC5343QLT1G, L2SC5343RLT1G, L2SC5343SLT1G, L2SC5635LT1G