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L2SA2030M3T5G Specs and Replacement


   Type Designator: L2SA2030M3T5G
   SMD Transistor Code: BW
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 260 MHz
   Collector Capacitance (Cc): 6.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 270
   Noise Figure, dB: -
   Package: SOT-723

 L2SA2030M3T5G Transistor Equivalent Substitute - Cross-Reference Search

   

L2SA2030M3T5G detailed specifications

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L2SA2030M3T5G

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G 1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5G VCE (sat) 250mA At IC = -200mA / IB = -10mA... See More ⇒

 0.1. Size:125K  lrc
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L2SA2030M3T5G

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G 1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5G VCE (sat) 250mA At IC = -200mA / IB = -10mA... See More ⇒

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L2SA2030M3T5G

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L2SA2030M3T5G

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Detailed specifications: EMT1DXV6T5G , EMT1FHA , EMT2 , EMT2FHA , EMT3 , EMT3FHA , L2SA1577QT1G , L2SA1577RT1G , 2SC2625 , L2SC3837QLT1G , L2SC3837T1G , L2SC3838QLT1G , L2SC4226T1G , L2SC5343QLT1G , L2SC5343RLT1G , L2SC5343SLT1G , L2SC5635LT1G .

History: KT683V | TP5449

Keywords - L2SA2030M3T5G transistor specs

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