Биполярный транзистор L2SA2030M3T5G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: L2SA2030M3T5G
Маркировка: BW
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 260 MHz
Ёмкость коллекторного перехода (Cc): 6.5 pf
Статический коэффициент передачи тока (hfe): 270
Корпус транзистора: SOT-723
Аналоги (замена) для L2SA2030M3T5G
L2SA2030M3T5G Datasheet (PDF)
l2sa2030m3t5g.pdf
LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5GVCE (sat) 250mA At IC = -200mA / IB = -10mA
s-l2sa2030m3t5g.pdf
LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5GVCE (sat) 250mA At IC = -200mA / IB = -10mA
l2sa2029rm3t5g.pdf
LESHAN RADIO COMPANY, LTD.PNP Silicon GeneralL2SA2029QM3T5GPurpose Amplifier TransistorL2SA2029RM3T5GThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where board3space is at a premium. Reduces Board Space High hFE, 210-460 (Typical)2
l2sa2029qm3t5g.pdf
LESHAN RADIO COMPANY, LTD.PNP Silicon GeneralL2SA2029QM3T5GPurpose Amplifier TransistorL2SA2029RM3T5GThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where board3space is at a premium. Reduces Board Space High hFE, 210-460 (Typical)2
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050