L2SC3838QLT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: L2SC3838QLT1G  📄📄 

Código: APQ

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 11 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1400 MHz

Capacitancia de salida (Cc): 0.8 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT-23

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L2SC3838QLT1G datasheet

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 l2sc3838qlt1g.pdf pdf_icon

L2SC3838QLT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3838QLT1G Features 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838QLT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 4.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AE

 6.1. Size:78K  lrc
 l2sc3838lt1g.pdf pdf_icon

L2SC3838QLT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3838LT1G 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838LT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-

 6.2. Size:78K  lrc
 l2sc3838lt1g l2sc3838lt3g.pdf pdf_icon

L2SC3838QLT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3838LT1G 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838LT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-

 6.3. Size:58K  lrc
 l2sc3838nlt1g.pdf pdf_icon

L2SC3838QLT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3838NLT1G Features 1.High transition frequency.(Typ.fT=3.2GHz) 3 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base Voltage V 20 V CBO

MOSTRAR MÁS

Otros transistores... EMT2FHA, EMT3, EMT3FHA, L2SA1577QT1G, L2SA1577RT1G, L2SA2030M3T5G, L2SC3837QLT1G, L2SC3837T1G, 9014, L2SC4226T1G, L2SC5343QLT1G, L2SC5343RLT1G, L2SC5343SLT1G, L2SC5635LT1G, L2SD1781KQLT1G, L8050HSLT1G, L8550HSLT1G