All Transistors. L2SC3838QLT1G Datasheet

 

L2SC3838QLT1G Datasheet and Replacement


   Type Designator: L2SC3838QLT1G
   SMD Transistor Code: APQ
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 11 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1400 MHz
   Collector Capacitance (Cc): 0.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-23
 

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L2SC3838QLT1G Datasheet (PDF)

 ..1. Size:78K  lrc
 l2sc3838qlt1g.pdf pdf_icon

L2SC3838QLT1G

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC3838QLT1G Features1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838QLT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.34.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AE

 6.1. Size:78K  lrc
 l2sc3838lt1g.pdf pdf_icon

L2SC3838QLT1G

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3838LT1G1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838LT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-

 6.2. Size:78K  lrc
 l2sc3838lt1g l2sc3838lt3g.pdf pdf_icon

L2SC3838QLT1G

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3838LT1G1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838LT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-

 6.3. Size:58K  lrc
 l2sc3838nlt1g.pdf pdf_icon

L2SC3838QLT1G

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC3838NLT1G Features1.High transition frequency.(Typ.fT=3.2GHz)32.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.12MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base Voltage V 20 VCBO

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Datasheet: EMT2FHA , EMT3 , EMT3FHA , L2SA1577QT1G , L2SA1577RT1G , L2SA2030M3T5G , L2SC3837QLT1G , L2SC3837T1G , C3198 , L2SC4226T1G , L2SC5343QLT1G , L2SC5343RLT1G , L2SC5343SLT1G , L2SC5635LT1G , L2SD1781KQLT1G , L8050HSLT1G , L8550HSLT1G .

History: T2491 | 2SD874AR | PN2905A | T1623 | MMBT9015LT1 | 2SC4289 | PN5141

Keywords - L2SC3838QLT1G transistor datasheet

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