All Transistors. L2SC3838QLT1G Datasheet

 

L2SC3838QLT1G Datasheet and Replacement


   Type Designator: L2SC3838QLT1G
   SMD Transistor Code: APQ
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 11 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1400 MHz
   Collector Capacitance (Cc): 0.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-23

 L2SC3838QLT1G Transistor Equivalent Substitute - Cross-Reference Search

   

L2SC3838QLT1G Datasheet (PDF)

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L2SC3838QLT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3838QLT1G Features 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838QLT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 4.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AE... See More ⇒

 6.1. Size:78K  lrc
 l2sc3838lt1g.pdf pdf_icon

L2SC3838QLT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3838LT1G 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838LT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-... See More ⇒

 6.2. Size:78K  lrc
 l2sc3838lt1g l2sc3838lt3g.pdf pdf_icon

L2SC3838QLT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3838LT1G 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838LT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-... See More ⇒

 6.3. Size:58K  lrc
 l2sc3838nlt1g.pdf pdf_icon

L2SC3838QLT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3838NLT1G Features 1.High transition frequency.(Typ.fT=3.2GHz) 3 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base Voltage V 20 V CBO ... See More ⇒

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Datasheet: EMT2FHA , EMT3 , EMT3FHA , L2SA1577QT1G , L2SA1577RT1G , L2SA2030M3T5G , L2SC3837QLT1G , L2SC3837T1G , 9014 , L2SC4226T1G , L2SC5343QLT1G , L2SC5343RLT1G , L2SC5343SLT1G , L2SC5635LT1G , L2SD1781KQLT1G , L8050HSLT1G , L8550HSLT1G .

History: T1892 | L2SC5635LT1G | D42C3 | L2SA1576ART1G | UN9215R | MRF653S | MUN2230LT1

Keywords - L2SC3838QLT1G transistor datasheet

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