LBC807-25DMT1G Todos los transistores

 

LBC807-25DMT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LBC807-25DMT1G
   Código: 5B
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.37 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 160
   Paquete / Cubierta: SOT-457
 

 Búsqueda de reemplazo de LBC807-25DMT1G

   - Selección ⓘ de transistores por parámetros

 

LBC807-25DMT1G Datasheet (PDF)

 ..1. Size:171K  lrc
lbc807-25dmt1g.pdf pdf_icon

LBC807-25DMT1G

LESHAN RADIO COMPANY, LTD.LBC807-16DMT1GLBC807-25DMT1GDual General Purpose TransistorsLBC807-40DMT1GPNP DualsS-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC807-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC807-40DMT

 5.1. Size:254K  lrc
lbc807-25lt1g.pdf pdf_icon

LBC807-25DMT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC807-16LT1GLBC807-25LT1GPNP SiliconLBC807-40LT1GFEATURES-LBC807-16LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V.S-LBC807-25LT1G General purpose switching and amplification.S-LBC807-40LT1G PNP complement: LBC807 Series. We declare that the material of product complia

 5.2. Size:78K  lrc
lbc807-25wt1g.pdf pdf_icon

LBC807-25DMT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other

 5.3. Size:78K  lrc
lbc807-25wt1g lbc807-25wt3g.pdf pdf_icon

LBC807-25DMT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


 
.