LBC807-25DMT1G Datasheet and Replacement
Type Designator: LBC807-25DMT1G
SMD Transistor Code: 5B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.37 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT-457
LBC807-25DMT1G Substitution
LBC807-25DMT1G Datasheet (PDF)
lbc807-25dmt1g.pdf

LESHAN RADIO COMPANY, LTD.LBC807-16DMT1GLBC807-25DMT1GDual General Purpose TransistorsLBC807-40DMT1GPNP DualsS-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC807-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC807-40DMT
lbc807-25lt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC807-16LT1GLBC807-25LT1GPNP SiliconLBC807-40LT1GFEATURES-LBC807-16LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V.S-LBC807-25LT1G General purpose switching and amplification.S-LBC807-40LT1G PNP complement: LBC807 Series. We declare that the material of product complia
lbc807-25wt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other
lbc807-25wt1g lbc807-25wt3g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other
Datasheet: L2SC5635LT1G , L2SD1781KQLT1G , L8050HSLT1G , L8550HSLT1G , L9012 , L9013 , L9014 , LBC807-16DMT1G , 2SC2383Y , LBC807-40DMT1G , LBC817-16DMT1G , LBC817-16DPMT1G , LBC817-25DMT1G , LBC817-40DMT1G , LBC817-40DPMT1G , LBC846ADW1T1G , LBC847CPDW1T1G .
History: MP1551A | 2SC1051 | BFY87A | RCA30B | SGSF445 | NPS5401 | BFY87
Keywords - LBC807-25DMT1G transistor datasheet
LBC807-25DMT1G cross reference
LBC807-25DMT1G equivalent finder
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LBC807-25DMT1G replacement
History: MP1551A | 2SC1051 | BFY87A | RCA30B | SGSF445 | NPS5401 | BFY87



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