MBT2222ADW1T1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MBT2222ADW1T1G
Código: 1P
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 75
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300
MHz
Capacitancia de salida (Cc): 8
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SOT-363
Búsqueda de reemplazo de transistor bipolar MBT2222ADW1T1G
MBT2222ADW1T1G
Datasheet (PDF)
..1. Size:160K onsemi
mbt2222adw1t1g.pdf
MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur
0.1. Size:250K lrc
lmbt2222adw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-
0.2. Size:250K lrc
lmbt2222adw1t1g lmbt2222adw1t3g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-
1.1. Size:164K onsemi
mbt2222adw1t1.pdf
MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur
1.2. Size:341K willas
mmbt2222adw1t1.pdf
FM120-M MMBT2222ADW1T1WILLASTHRUDual General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to o
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