MBT2222ADW1T1G Datasheet and Replacement
Type Designator: MBT2222ADW1T1G
SMD Transistor Code: 1P
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-363
MBT2222ADW1T1G Substitution
MBT2222ADW1T1G Datasheet (PDF)
mbt2222adw1t1g.pdf

MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur
lmbt2222adw1t1g.pdf

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-
lmbt2222adw1t1g lmbt2222adw1t3g.pdf

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-
mbt2222adw1t1.pdf

MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur
Datasheet: M54585FP , M8050-C , M8050-D , M8050S , M8550S , MA42 , MA92 , MAG9413 , 2N5401 , MBT35200MT1G , MBT3904DW1T3G , MBT3906DW1T2G , MBT3946DW1T2G , MBT6517LT1 , MBTA06LT1 , RT3A66M , RT3A77M .
History: NB024F | 2SB656A | STA403A | BFW22 | HJ44H11 | H1266 | ST2N2907A
Keywords - MBT2222ADW1T1G transistor datasheet
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MBT2222ADW1T1G replacement
History: NB024F | 2SB656A | STA403A | BFW22 | HJ44H11 | H1266 | ST2N2907A



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