MBT3906DW1T2G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MBT3906DW1T2G

Código: A2

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-363

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MBT3906DW1T2G datasheet

 ..1. Size:130K  onsemi
 mbt3906dw1t2g.pdf pdf_icon

MBT3906DW1T2G

MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applicat

 3.1. Size:130K  onsemi
 mbt3906dw1t1g smbt3906dw1t1g.pdf pdf_icon

MBT3906DW1T2G

MBT3906DW1T1G, SMBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

 3.2. Size:178K  onsemi
 mbt3906dw1t1.pdf pdf_icon

MBT3906DW1T2G

MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 http //onsemi.com six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications whe

 3.3. Size:344K  willas
 mmbt3906dw1t1.pdf pdf_icon

MBT3906DW1T2G

FM120-M WILLAS MMBT3906DW1T1 THRU Dual Bias Resistor Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimi

MOSTRAR MÁS

Otros transistores... M8050S, M8550S, MA42, MA92, MAG9413, MBT2222ADW1T1G, MBT35200MT1G, MBT3904DW1T3G, 2N3055, MBT3946DW1T2G, MBT6517LT1, MBTA06LT1, RT3A66M, RT3A77M, RT3C66M, RT3C77M, RT3CLLM