MBT3906DW1T2G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MBT3906DW1,SMBT3906DW1Dual General PurposeTransistorThe MBT3906DW1 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mountapplicat

MBT3906DW1T1G,SMBT3906DW1T1GDual General PurposeTransistorThe MBT3906DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mount

MBT3906DW1T1GDual General PurposeTransistorThe MBT3906DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-363http://onsemi.comsix-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mountapplications whe

FM120-M WILLAS MMBT3906DW1T1THRUDual Bias Resistor TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimi

LESHAN RADIO COMPANY, LTD.Dual Bias ResistorLMBT3906DW1T1GTransistor654The LMBT3906DW1T1 device isa spinoff of our popularSOT23/SOT323 threeleaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT3631sixleaded surface mount package. By putting two discrete devices in23one package, this device is ideal for low