MBT3906DW1T2G pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

MBT3906DW1T2G Specs and Replacement

Type Designator: MBT3906DW1T2G

SMD Transistor Code: A2

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-363

MBT3906DW1T2G Substitution

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MBT3906DW1T2G datasheet

..1. Size:130K onsemi

mbt3906dw1t2g.pdf pdf_icon

MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applicat... See More ⇒

3.1. Size:130K onsemi

mbt3906dw1t1g smbt3906dw1t1g.pdf pdf_icon

MBT3906DW1T1G, SMBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount ... See More ⇒

3.2. Size:178K onsemi

mbt3906dw1t1.pdf pdf_icon

MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 http //onsemi.com six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications whe... See More ⇒

3.3. Size:344K willas

mmbt3906dw1t1.pdf pdf_icon

FM120-M WILLAS MMBT3906DW1T1 THRU Dual Bias Resistor Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimi... See More ⇒