MBT3906DW1T2G PDF and Equivalents Search

 

MBT3906DW1T2G Specs and Replacement


   Type Designator: MBT3906DW1T2G
   SMD Transistor Code: A2
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-363
 

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MBT3906DW1T2G datasheet

 ..1. Size:130K  onsemi
 mbt3906dw1t2g.pdf pdf_icon

MBT3906DW1T2G

MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applicat... See More ⇒

 3.1. Size:130K  onsemi
 mbt3906dw1t1g smbt3906dw1t1g.pdf pdf_icon

MBT3906DW1T2G

MBT3906DW1T1G, SMBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount ... See More ⇒

 3.2. Size:178K  onsemi
 mbt3906dw1t1.pdf pdf_icon

MBT3906DW1T2G

MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 http //onsemi.com six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications whe... See More ⇒

 3.3. Size:344K  willas
 mmbt3906dw1t1.pdf pdf_icon

MBT3906DW1T2G

FM120-M WILLAS MMBT3906DW1T1 THRU Dual Bias Resistor Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimi... See More ⇒

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Detailed specifications: M8050S , M8550S , MA42 , MA92 , MAG9413 , MBT2222ADW1T1G , MBT35200MT1G , MBT3904DW1T3G , 2N3055 , MBT3946DW1T2G , MBT6517LT1 , MBTA06LT1 , RT3A66M , RT3A77M , RT3C66M , RT3C77M , RT3CLLM .

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