MBT3906DW1T2G. Аналоги и основные параметры

Наименование производителя: MBT3906DW1T2G

Маркировка: A2

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 40 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.2 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 250 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: SOT-363

 Аналоги (замена) для MBT3906DW1T2G

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MBT3906DW1T2G даташит

 ..1. Size:130K  onsemi
 mbt3906dw1t2g.pdf pdf_icon

MBT3906DW1T2G

MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applicat

 3.1. Size:130K  onsemi
 mbt3906dw1t1g smbt3906dw1t1g.pdf pdf_icon

MBT3906DW1T2G

MBT3906DW1T1G, SMBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

 3.2. Size:178K  onsemi
 mbt3906dw1t1.pdf pdf_icon

MBT3906DW1T2G

MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 http //onsemi.com six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications whe

 3.3. Size:344K  willas
 mmbt3906dw1t1.pdf pdf_icon

MBT3906DW1T2G

FM120-M WILLAS MMBT3906DW1T1 THRU Dual Bias Resistor Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimi

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: M8050S, M8550S, MA42, MA92, MAG9413, MBT2222ADW1T1G, MBT35200MT1G, MBT3904DW1T3G, 2N3055, MBT3946DW1T2G, MBT6517LT1, MBTA06LT1, RT3A66M, RT3A77M, RT3C66M, RT3C77M, RT3CLLM