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MBT6517LT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MBT6517LT1
   Código: 1Z
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 350 V
   Tensión colector-emisor (Vce): 350 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 40 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SOT-23
 

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MBT6517LT1 Datasheet (PDF)

 ..1. Size:60K  wej
 mbt6517lt1.pdf pdf_icon

MBT6517LT1

RoHS MBT6517LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW(Ta=25 ) * Collector-Emitter Voltage :Vceo=350V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol RatingCollector-Base Voltage Vcbo 350 V Collector-Emitter Voltage Vceo 350 V 1.Emitter-Base Voltage Vebo 6 V 1.BASE2.41.32.EMITTERCollector Current Ic 500

 0.1. Size:124K  onsemi
 mmbt6517lt1g.pdf pdf_icon

MBT6517LT1

MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC

 0.2. Size:124K  onsemi
 nsvmmbt6517lt1g.pdf pdf_icon

MBT6517LT1

MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC

 0.3. Size:156K  onsemi
 mmbt6517lt1.pdf pdf_icon

MBT6517LT1

MMBT6517LT1GHigh Voltage TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR31BASEMAXIMUM RATINGSRating Symbol Value Unit 2EMITTERCollector - Emitter Voltage VCEO 350 VCollector -Base Voltage VCBO 350 V3Emitter - Base Voltage VEBO 5.0 VBase Current IB 25 mA1Collector Current - C

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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