MBT6517LT1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MBT6517LT1

Código: 1Z

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 350 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: SOT-23

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MBT6517LT1 datasheet

 ..1. Size:60K  wej
 mbt6517lt1.pdf pdf_icon

MBT6517LT1

RoHS MBT6517LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation Pc=225mW(Ta=25 ) * Collector-Emitter Voltage Vceo=350V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Collector-Base Voltage Vcbo 350 V Collector-Emitter Voltage Vceo 350 V 1. Emitter-Base Voltage Vebo 6 V 1.BASE 2.4 1.3 2.EMITTER Collector Current Ic 500

 0.1. Size:124K  onsemi
 mmbt6517lt1g.pdf pdf_icon

MBT6517LT1

MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C

 0.2. Size:124K  onsemi
 nsvmmbt6517lt1g.pdf pdf_icon

MBT6517LT1

MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C

 0.3. Size:156K  onsemi
 mmbt6517lt1.pdf pdf_icon

MBT6517LT1

MMBT6517LT1G High Voltage Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector - Emitter Voltage VCEO 350 V Collector -Base Voltage VCBO 350 V 3 Emitter - Base Voltage VEBO 5.0 V Base Current IB 25 mA 1 Collector Current - C

MOSTRAR MÁS

Otros transistores... MA42, MA92, MAG9413, MBT2222ADW1T1G, MBT35200MT1G, MBT3904DW1T3G, MBT3906DW1T2G, MBT3946DW1T2G, TIP41, MBTA06LT1, RT3A66M, RT3A77M, RT3C66M, RT3C77M, RT3CLLM, RT3CRRM, RT3CXXM