All Transistors. MBT6517LT1 Datasheet

 

MBT6517LT1 Datasheet and Replacement


   Type Designator: MBT6517LT1
   SMD Transistor Code: 1Z
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT-23
 

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MBT6517LT1 Datasheet (PDF)

 ..1. Size:60K  wej
 mbt6517lt1.pdf pdf_icon

MBT6517LT1

RoHS MBT6517LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW(Ta=25 ) * Collector-Emitter Voltage :Vceo=350V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol RatingCollector-Base Voltage Vcbo 350 V Collector-Emitter Voltage Vceo 350 V 1.Emitter-Base Voltage Vebo 6 V 1.BASE2.41.32.EMITTERCollector Current Ic 500

 0.1. Size:124K  onsemi
 mmbt6517lt1g.pdf pdf_icon

MBT6517LT1

MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC

 0.2. Size:124K  onsemi
 nsvmmbt6517lt1g.pdf pdf_icon

MBT6517LT1

MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC

 0.3. Size:156K  onsemi
 mmbt6517lt1.pdf pdf_icon

MBT6517LT1

MMBT6517LT1GHigh Voltage TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR31BASEMAXIMUM RATINGSRating Symbol Value Unit 2EMITTERCollector - Emitter Voltage VCEO 350 VCollector -Base Voltage VCBO 350 V3Emitter - Base Voltage VEBO 5.0 VBase Current IB 25 mA1Collector Current - C

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Keywords - MBT6517LT1 transistor datasheet

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