PBSS4032NX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS4032NX
Código: *6H
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2.5 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4.7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 145 MHz
Capacitancia de salida (Cc): 65 pF
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta: SOT-89
Búsqueda de reemplazo de PBSS4032NX
PBSS4032NX Datasheet (PDF)
pbss4032nx.pdf

PBSS4032NX30 V, 4.7 A NPN low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PX.1.2 Features and benefits Very low collector-emitter saturati
pbss4032nx.pdf

PBSS4032NX30 V, 4.7 A NPN low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PX.1.2 Features and benefits Very low collector-emitter saturati
pbss4032nd.pdf

PBSS4032ND30 V, 3.5 A NPN low VCEsat (BISS) transistorRev. 01 30 January 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PD.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc
pbss4032nt.pdf

PBSS4032NT30 V, 2.6 A NPN low VCEsat (BISS) transistorRev. 01 18 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PT.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 3CG1201 | 2SD1387 | 2N5185 | 2SC3970A | 2SD1389 | 2N4929 | EMX1FHA
History: 3CG1201 | 2SD1387 | 2N5185 | 2SC3970A | 2SD1389 | 2N4929 | EMX1FHA



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