PBSS4032NX Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4032NX

Código: *6H

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.5 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 145 MHz

Capacitancia de salida (Cc): 65 pF

Ganancia de corriente contínua (hFE): 150

Encapsulados: SOT-89

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PBSS4032NX datasheet

 ..1. Size:191K  philips
pbss4032nx.pdf pdf_icon

PBSS4032NX

PBSS4032NX 30 V, 4.7 A NPN low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PX. 1.2 Features and benefits Very low collector-emitter saturati

 ..2. Size:191K  nxp
pbss4032nx.pdf pdf_icon

PBSS4032NX

PBSS4032NX 30 V, 4.7 A NPN low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PX. 1.2 Features and benefits Very low collector-emitter saturati

 5.1. Size:150K  philips
pbss4032nd.pdf pdf_icon

PBSS4032NX

PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor Rev. 01 30 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PD. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc

 5.2. Size:182K  philips
pbss4032nt.pdf pdf_icon

PBSS4032NX

PBSS4032NT 30 V, 2.6 A NPN low VCEsat (BISS) transistor Rev. 01 18 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PT. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw

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