All Transistors. PBSS4032NX Datasheet

 

PBSS4032NX Datasheet and Replacement


   Type Designator: PBSS4032NX
   SMD Transistor Code: *6H
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 145 MHz
   Collector Capacitance (Cc): 65 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SOT-89
 

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PBSS4032NX Datasheet (PDF)

 ..1. Size:191K  philips
pbss4032nx.pdf pdf_icon

PBSS4032NX

PBSS4032NX30 V, 4.7 A NPN low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PX.1.2 Features and benefits Very low collector-emitter saturati

 ..2. Size:191K  nxp
pbss4032nx.pdf pdf_icon

PBSS4032NX

PBSS4032NX30 V, 4.7 A NPN low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PX.1.2 Features and benefits Very low collector-emitter saturati

 5.1. Size:150K  philips
pbss4032nd.pdf pdf_icon

PBSS4032NX

PBSS4032ND30 V, 3.5 A NPN low VCEsat (BISS) transistorRev. 01 30 January 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PD.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc

 5.2. Size:182K  philips
pbss4032nt.pdf pdf_icon

PBSS4032NX

PBSS4032NT30 V, 2.6 A NPN low VCEsat (BISS) transistorRev. 01 18 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PT.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw

Datasheet: PBSS3540MB , PBSS4021NX , PBSS4021NZ , PBSS4021PX , PBSS4021PZ , PBSS4021SN , PBSS4021SP , PBSS4021SPN , S9014 , PBSS4032NZ , PBSS4032PX , PBSS4032PZ , PBSS4032SN , PBSS4032SP , PBSS4032SPN , PBSS4041NX , PBSS4041NZ .

History: 2SB639 | BD952 | 2SB435O

Keywords - PBSS4032NX transistor datasheet

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