PBSS4032NZ Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4032NZ

Código: PB4032NZ

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4.9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 145 MHz

Capacitancia de salida (Cc): 65 pF

Ganancia de corriente contínua (hFE): 150

Encapsulados: SOT-223

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PBSS4032NZ datasheet

 ..1. Size:196K  philips
pbss4032nz.pdf pdf_icon

PBSS4032NZ

PBSS4032NZ 30 V, 4.9 A NPN low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PZ. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

 ..2. Size:196K  nxp
pbss4032nz.pdf pdf_icon

PBSS4032NZ

PBSS4032NZ 30 V, 4.9 A NPN low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PZ. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

 5.1. Size:150K  philips
pbss4032nd.pdf pdf_icon

PBSS4032NZ

PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor Rev. 01 30 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PD. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc

 5.2. Size:182K  philips
pbss4032nt.pdf pdf_icon

PBSS4032NZ

PBSS4032NT 30 V, 2.6 A NPN low VCEsat (BISS) transistor Rev. 01 18 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PT. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw

Otros transistores... PBSS4021NX, PBSS4021NZ, PBSS4021PX, PBSS4021PZ, PBSS4021SN, PBSS4021SP, PBSS4021SPN, PBSS4032NX, S9014, PBSS4032PX, PBSS4032PZ, PBSS4032SN, PBSS4032SP, PBSS4032SPN, PBSS4041NX, PBSS4041NZ, PBSS4041PX