Биполярный транзистор PBSS4032NZ - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PBSS4032NZ
Маркировка: PB4032NZ
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4.9 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 145 MHz
Ёмкость коллекторного перехода (Cc): 65 pf
Статический коэффициент передачи тока (hfe): 150
Корпус транзистора: SOT-223
Аналоги (замена) для PBSS4032NZ
PBSS4032NZ Datasheet (PDF)
pbss4032nz.pdf
PBSS4032NZ30 V, 4.9 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PZ.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat
pbss4032nz.pdf
PBSS4032NZ30 V, 4.9 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PZ.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat
pbss4032nd.pdf
PBSS4032ND30 V, 3.5 A NPN low VCEsat (BISS) transistorRev. 01 30 January 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PD.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc
pbss4032nt.pdf
PBSS4032NT30 V, 2.6 A NPN low VCEsat (BISS) transistorRev. 01 18 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PT.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw
pbss4032nx.pdf
PBSS4032NX30 V, 4.7 A NPN low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PX.1.2 Features and benefits Very low collector-emitter saturati
pbss4032nd.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss4032nt.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss4032nx.pdf
PBSS4032NX30 V, 4.7 A NPN low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PX.1.2 Features and benefits Very low collector-emitter saturati
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